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  • 1
    Electronic Resource
    Electronic Resource
    Transmission electron microscopy and photoluminescence studies of Er implanted low-temperature grown GaAs:Be (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2170-2172 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Characteristic 1.54 μm 4f-4f emission has been observed from Er3+ centers in Er-implanted and annealed, low-temperature grown GaAs:Be samples, while cross-sectional transmission electron microscopy (TEM) studies reveal very little structural damage for elevated temperature implants. No Er emission was observed from any of the as-implanted samples, while the Er emission intensity was significantly more intense after 650 °C anneals than after 750 °C anneals. Significant enhancement of the optically active Er incorporation was achieved when the implantation was carried out at 300 °C. For the two total Er fluences employed (5.5×1013 and 13.6×1013 Er/cm2) the Er emission intensity exhibited a linear dependence upon implantation fluence, while TEM indicated no significant increase in the damage level at the higher fluence 300 °C implant. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122412
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  • 2
    Electronic Resource
    Electronic Resource
    Sequential phase formation by ion-induced epitaxy in Fe-implanted Si(001). Study of their properties and thermal behavior (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 752-762 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The epitaxial growth of FeSi2 silicides was studied by using ion-beam epitaxial crystallization (IBIEC) of Fe-implanted Si(001) samples. By employing Rutherford backscattering/channeling spectrometry and transmission electron microscopy it was possible to determine that the IBIEC process produces a γ-, α-, and β-FeSi2 phase sequence, with increasing Fe concentration along the implantation profile. The critical concentrations for γ→α and α→β phase transitions are 11 and 21 at. %, respectively. A study of the thermal behavior of these phases shows that the γ- and α-FeSi2 are metastable with respect to the β-FeSi2 phase. The γ to β-FeSi2 transition starts at 700 °C via an Ostwald ripening process. In addition a 800 °C, 1 h anneal of high Fe concentration samples produces a complete α and γ to β-FeSi2 transformation. Finally, it is demonstrated that a regular or a rapid thermal annealing on Fe-implanted Si samples induces only the formation of a β-FeSi2 phase. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360821
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  • 3
    Electronic Resource
    Electronic Resource
    Seeding of InP islands on InAs quantum dot templates (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6548-6550 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ability of stacking layers of islands and their corresponding alignment have prompted a number of studies. The main focus so far has been on stacking self-assembled quantum dot (QD) layers of the same material and composition. Our goal is to create systems of coupled QDs of different electronic properties, aiming at hybridization of their different electronic levels. In this work, we investigate the early stages of the coupling of alternate InAs–InP QD layers through a GaAs spacer layer. We have found that by using an InAs layer containing QDs as seeds, we can control the size, shape and density of InP islands by varying the spacer thickness. We have observed a significant improvement of the InP island size uniformity, as well as an induced size reduction, thus providing an extra degree of tunability previously available only through growth kinetics. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1365939
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  • 4
    Electronic Resource
    Electronic Resource
    Structural and photoluminescence studies of Er implanted Be doped and undoped low-temperature grown GaAs (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 1105-1113 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Characteristic 1.54 μm Er3+ emission has been observed from Er-implanted and annealed, low-temperature grown GaAs Be doped and undoped samples. Er plateau implantations (480, 155, and 40 keV successive implants) were performed at 300 °C covering calculated Er concentrations from 1018 up to 1020 Er/cm3. Cross-sectional transmission electron microscopy studies reveal very little structural damage for these elevated temperature implants up to an Er total fluence of 1.36×1014 Er/cm2. No Er emission was observed from any of the as-implanted samples but it was observed after postimplantation annealings at 650 and 750 °C temperatures. The Er emission was significantly more intense after 650 °C anneals, for Be doped samples, and after 750 °C anneals for undoped samples. It appears on top of a broad background luminescence associated with midgap states. The Er emission intensity was found to scale linearly with the total Er implantation fluence up to Er concentration of ∼1019 Er/cm3. Er precipitation was observed after 750 °C annealing for 1019 Er/cm3 samples, but could be observed for 1020 Er/cm3 Er-doped samples even after a 650 °C anneal. These precipitates are most likely ErAs. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369236
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  • 5
    Electronic Resource
    Electronic Resource
    Effects of barrier alloy composition and number of stacks in the optical and structural characteristics of strain compensated InxGa1−xAsyP1−y/InzGa1−zAstP1−t/InP multiquantum wells (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5915-5922 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have optically and structurally investigated the effect of the barrier alloy composition and number of wells in strain compensated InGaAsP/InP multiquantum well (MQW) samples grown by low-pressure metalorganic vapor phase epitaxy that emit close to 1.55 μm. Low temperature photoluminescence (PL) spectra exhibited two additional anomalous emission lines, below the fundamental QW transition. The PL temperature evolution of such anomalous transitions deviates significantly from the bulk-like band gap behavior expected. Cross-sectional transmission electron microscopy (XTEM) shows that partial elastic relaxation, characterized by localized surface deformations (like surface channels) and/or interfacial undulations occurs for all samples in which anomalous PL lines are observed. TEM results also show that the extra PL lines are correlated to neither Cu–Pt type atomic ordering in the well/barrier layers nor to phase separation. These anomalous transitions are tentatively attributed to the presence of interfacial undulation as well as to surface deformation and to the presence of interfacial domains with an intermediary composition between those of the barrier and QW layers. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1467958
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