ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We have investigated the morphology and doping characteristics of 4H-SiC epilayersgrown on 13o-22o off-axis (0001) substrates by horizontal hot-wall CVD. Step bunching is notobserved on 18o off-axis substrates as well as on other substrates with large off-angles. The rmsroughness is a minimum (as small as 0.10 nm) on 18o off-axis (0001). Under C-rich condition (C/Si〉1.0), the donor concentration increases by increasing the off-angle, when the off-angle is larger than15o. This trend in doping characteristic is enhanced in CVD growth at 1450-1500oC. At a hightemperature of 1600oC, however, the off-angle dependence of donor concentration is significantlyreduced. Epitaxial growth on 4H-SiC(000-1) with large off-angles is also reported
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.223.pdf
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