Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
63 (1993), S. 228-230
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The first fabrication of low cost n-Sb2S3/p-Si heterojunction solar cells by chemical deposition method is reported. It is observed that in the case of n-Sb2S3 films chemically deposited with silicotungstic acid on p-Si and annealed, the photovoltaic properties of the n-Sb2S3/p-Si junctions are considerably improved. Under AM1 illumination, the improved junction exhibited an efficiency (η) of ∼5.19% on an active area of 0.05 cm2 without any antireflection coating whereas the n-Sb2S3 films deposited without STA on p-Si showed η=1.03%.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.110349
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