ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
In this work we present a comprehensive comparison of ultra thin thermally nitrided(TN) to plasma nitrided (PN) gate dielectrics (GD). We will show that thermal nitridation is apromising technique to increase the nitrogen concentration up to 25%. Furthermore, we willdemonstrate that ultra thin thermally nitrided GD have the potential to be an alternative solutioncompared to plasma nitrided GD. This work includes the analysis of physical and electricalparameters as well as reliability results from reliability characterization. Additionally, weinvestigated the impact of Deuterium on electrical parameters and reliability behavior
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/18/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.573-574.153.pdf
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