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  • 1
    Electronic Resource
    Electronic Resource
    Modeling of the Diffusion and Activation of Arsenic in Silicon Including Clustering and Precipitation (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 131-133 (Oct. 2007), p. 277-282 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: We have developed a diffusion and activation model for implanted arsenic in silicon. Themodel includes the dynamic formation of arsenic-vacancy complexes (As4V) as well as the precipitationof a SiAs phase. The latter is mandatory to correctly describe concentrations above solidsolubility while the former are needed to describe the reduced electrical activity as well as the generationof self-interstitials during deactivation. In addition, the activation state after solid-phase epitaxyand the segregation at the interface to SiO2 are taken into account. After implementation usingthe Alagator language in the latest version of the Sentaurus Process Simulator of Synopsys, the parametersof the model were optimized using reported series of diffusion coefficients for temperaturesbetween 700 °C and 1200 °C, and using several SIMS profiles covering annealing processesfrom spike to very long times with temperatures between 700 °C and 1050 °C and a wide distributionof implantation energies and doses. The model was validated using data from flash-assistedRTP and spike annealing of ultra-low energy arsenic implants
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.131-133.277.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Modeling and Simulation of Advanced Annealing Processes (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 573-574 (Mar. 2008), p. 279-293 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: In this contribution we illustrate some important features of the development of modelsfor the simulation of advanced annealing processes. Taking arsenic as example we discuss the challengesthat the last technology trends represent for process modeling. Issues like shallow implants,high doses, low total thermal budgets, and steep temperature profiles are discussed, highlighting thephysical phenomena to take into account, and how to design models that reproduce them. We alsodiscuss with examples how important are the critical evaluation of known parameters and establishedapproaches, and the extraction of parameters from experiments. Finally we show some applicationsof our model for spike and flash annealing of arsenic implants
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/18/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.573-574.279.pdf
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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