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  • 1
    Electronic Resource
    Electronic Resource
    Luminescence from the H—O 2 Reaction (1963)
    [s.l.] : Nature Publishing Group
    Nature 197 (1963), S. 1198-1198 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Hydrogen atoms were produced by the dissociation of commercial hydrogen in two Wood's tubes and pumped through two side-arms on opposite sides of a reaction vessel 3-5 cm in diameter and 35 cm long connected directly to a 150 l./min rotary pump. Commercial oxygen was introduced through a third ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/1971198a0
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  • 2
    Electronic Resource
    Electronic Resource
    Surface topology of GaAs(100) after focused ion beam implantation of Si++ (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1305-1307 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs(100) was implanted with Si++ doses ranging from 3×1013 to 3×1016 cm−2 using a focused ion beam. The surface topology and roughness of implanted lines and squares was studied by atomic force microscopy. Above a threshold dose, protrusions of the ion beam treated areas in the range of 1–15 nm in heights and an increase in surface roughness were found. The height of the protrusions and surface roughness increase with increasing implantation dose up to a saturation level. Both the onset of substrate bulging and saturation of the effect are both dependent on the linewidth of the implant. Different causes for the protrusions are discussed. From Monte Carlo simulations, it is deduced that the volume expansion is most likely due to the creation of vacancies during implantation. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118519
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  • 3
    Electronic Resource
    Electronic Resource
    Thickness measurements of thin anodic oxides on GaAs using atomic force microscopy, profilometry, and secondary ion mass spectrometry (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2675-2677 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Techniques to determine the thickness of thin (30–200 A(ring)) anodic oxide films on p-GaAs (100) are reported. The layers were grown potentiostatically in 0.3 M NH4H2PO4 (pH 4.4) solution. By lithographic techniques, several series of squares were etched into the oxide and the step height was measured using both atomic force microscopy (AFM) and a stylus surface profiler (Dektak). Secondary ion mass spectrometry (SIMS) profiles of samples prior to and after the photolithographic treatment show that neither the thickness nor composition of the layers are affected by the treatment. The thickness values obtained in the investigated range show standard deviations better than ±9 A(ring) (AFM) and ±22 A(ring) (Dektak) and correlate well in a linear relation to SIMS sputter times to the interface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116278
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  • 4
    Electronic Resource
    Electronic Resource
    The double crystal technique — its application to reconstructed InSb (001) and Xe layers (1988)
    Springer
    The European physical journal 10 (1988), S. 369-376 
    Details
    ISSN: 1434-6079
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The early work of Stern has been reviewed briefly along with some of our experiments carried out later with similar geometrical arrangements in order to highlight his successes at the time and the future developments of his findings and predictions. The double crystal technique, developed by Stern has been used for energy analysis of He beams and results are shown for scattering from a rough reconstructed (001) InSb surface and Xe adsorbed layers. Surface phonons were not observed in the case of InSb probably as a result of the rough surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01384872
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