ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The doping characteristics of Si-diffused III-V compounds have been investigated using fully dielectric diffusion sources consisting of undoped SiOx/SiN double-layered films prepared by plasma-enhanced chemical-vapor deposition. It is demonstrated that the rectangular-shaped carrier concentration profiles resulting from the Si diffusion in GaAs can be controlled by varying the deposition parameters of the SiOx/SiN films, i.e., the N2O flow rate in the SiOx deposition, the SiOx film thickness, and the NH3 flow rate in the SiN deposition. It is explained that the profile variations are determined by the quantity of an excess of Si in the SiOx bottom film and the outdiffusion rate of Ga and/or As from GaAs. Furthermore, the Si diffusion experiments are carried out in AlxGa1−xAs, and the formation of a two-dimensional electron gas with a Hall mobility of 5060 cm2/V s at 300 K and 97 500 cm2/V s at 77 K is achieved by diffusing Si into an undoped GaAs/Al0.22Ga0.78As heterostructure. © 1994 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.358017
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