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  • 1
    Electronic Resource
    Electronic Resource
    Time-resolved reflectivity techniques for dynamic studies of electron beam recrystallization of silicon-on-insulator films (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1844-1846 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A time-resolved reflectivity (TRR) technique has been developed for dynamic studies of swept beam heating of silicon-on-insulator (SOI) materials. The method exploits the temperature dependence of the reflectivity of SOI films to allow noncontact temperature measurement with high spatial and temporal resolution. This technique is of considerable practical importance for beam processing, since it allows the temperature distribution induced by a beam being scanned across a specimen to be determined. The temperature distribution produced by a line electron beam swept across a SOI specimen was experimentally measured and found to be consistent with a theoretical prediction. The TRR technique can also be used to study melting and will prove useful for characterizing zone melting recrystallization, where thermal modeling is often inadequate for the complex structures involved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100372
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Selective epitaxial growth in silicon on insulator: Planarity and mass flow (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3718-3721 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Seeded zone-melt recrystallization using a dual electron beam system has been performed on silicon-on-insulator material, which was prepared with single-crystal silicon filling of the seed windows by selective epitaxial growth. The crystal quality has been assessed by a variety of microscopic techniques, and it is shown that single-crystal films 0.5–1.0 μm thick over 1.0 μm of isolating oxide may be prepared by this method. These films have considerably less lateral variation in thickness than standard material, in which the windows are not so filled. The filling method is suitable for both single- and multiple-layer silicon-on-insulator, and gives the advantages of excellent layer uniformity after recrystallization and improved planarity of the whole chip structure. Experiments using various amounts of seed window filling have shown that the lateral variations of silicon film thickness seen in unplanarized material are due to stress relief in the cap oxide when the silicon film is molten, rather than the effect previously postulated in which they were assumed to be due to the contraction of silicon on melting.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342602
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Temperature distributions and molten zones induced by heating with line-shaped electron beams (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 2285-2296 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A recently developed time-resolved reflectivity technique has been used to characterize the temperature distributions and molten zones induced in silicon-on-insulator structures by heating with scanned line-shaped electron beams. Measured temperature distributions were compared to theoretical predictions from a one-dimensional heat-flow model, which assumes that the heat flow parallel to the surface can be ignored. The results from the experiments and the predictions from the numerical model were also compared to predictions from an analytical model for heating of a homogeneous material. The range of heating conditions for which the one-dimensional approximation was suitable was determined, and it was found to be satisfactory for heating with line beams of more than 200-μm width at sweep speeds greater than 5 cm/s. Conditions which produced melting of the silicon film were explored, and it was found that the numerical model did not adequately describe this phase transition. The discrepancy between the theoretical predictions and the observed results can be explained by the need to supercool the liquid silicon by approximately 155 °C before it freezes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344285
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Electron beam system for rapid isothermal annealing of semiconductor materials and devices (1985)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 56 (1985), S. 1257-1261 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An isothermal processing system using a 2-kW electron beam is described. Processing of areas up to 4×4 in. is achieved by rapidly scanning the beam in the multiple scan mode. An analysis of this method and some typical heating cycles for silicon wafers are presented. There is good agreement between theoretically predicted and experimentally measured temperatures. Additionally, closed-loop operation is demonstrated where an optical pyrometer is used to control the electron beam current. This machine can either process whole wafers, or can sequentially treat a large number of small chips. This enables, for example, the rapid assessment of the annealing behavior of a particular implant by processing chips, cut from the same wafer, under varying conditions. Heating cycles of a fraction of a second to tens of seconds or more, which are not possible with furnaces, at temperatures up to 1000°C or greater have found many applications in semiconductor processing. Two important uses are described in this paper illustrating the potential of the technique. One is the annealing of an arsenic implant in silicon with negligible diffusion and the other is the controlled drive in of arsenic.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1137987
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Scanning electron microscopy study of seeded recrystallization of silicon-on-insulator layers with either polycrystalline or epitaxially deposited silicon in the seed windows (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1438-1441 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon-on-insulator layers have been produced under conditions which are compatible with three-dimensional device integration. The layers were formed by zone melting recrystallization of two types of seeded silicon films in a dual electron beam system. High-resolution scanning electron microscopy was used to observe the starting materials and the stages of recrystallization from unseeded regrowth through seeded regrowth to under oxide melting. With the standard structure, which has an overall layer of polycrystalline silicon, good seeding requires melting into the bulk. However, when the silicon is deposited under conditions which give epitaxial growth in the seed windows, seeded recrystallization does not require melting in the substrate or even across the complete width of the window. A study of the silicon mass flow for the various stages is presented and the processing conditions for the minimum thickness variation of the silicon film are reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339923
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Improvement in the thickness uniformity of silicon-on-insulator layers formed by dual electron beam recrystallization (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2183-2189 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Simple modifications to the processing of the capping layer in structures used for the preparation of silicon-on-insulator films by liquid phase recrystallization using the dual electron beam method are shown to reduce nonuniformities in the recrystallized layers. A model has been developed to explain the nature of thickness variations in recrystallized layers in terms of the geometry of the starting structure, the condition of the capping layer and the recrystallization conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348747
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    Paper (German National Licenses)
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