Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Fourier transform infrared study of ion irradiated nitrocellulose (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4837-4845 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The self-developing mechanism of nitrocellulose is studied by means of low-temperature infrared spectroscopy. It is found that 150-keV A+ beams with fluences ranging from 1013 ions cm−2 to 6×1013 ions cm−2 induce atomic bond breaks leading to absorption bands at 2344, 2138, 1868, 1750, and 1590 cm−1, corresponding, respectively, to CO2, CNH, CO, CHO, and NO vibrations. At low temperature and under vacuum, intensity measurements of the CO2 absorption band versus ion fluences are performed. Carbylamine formation, cyclic anhydride of five carbon atom formation, and denitration are observed. A theoretical model, based upon those three mechanisms is presented which partially explains the self-development of the ion irradiated nitrocellulose.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346143
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Etch rate modeling for ion-irradiated nitrocellulose (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2785-2787 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The self-developing mechanism of nitrocellulose when used as an ion beam resist is described by a model predicting the evolution of the etch rate versus irradiation time. Fundamentals of the model based on ion energy deposition dependent ablative development along with related mathematical derivations are given and briefly discussed. Comparison between theoretical results and experimental data available for protons at 20 keV and Ne+, Ar+, Kr+ ions at 150 keV is made and shows a good agreement. This result clearly does not conflict with our assumption that the nitrocellulose etch rate is dependent on the total ion deposited energy no matter how the energy is deposited.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103787
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Ion implantation profile modeling of nitrocellulose coated substrates (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2856-2858 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The modification of a standard ion implantation profile is usually achieved by carrying out successive irradiations at variable ion incident energy. Keeping this latter parameter constant, we propose an alternative way which consists in implanting the substrate through a nitrocellulose thin film shrinking during ion irradiation. Making precise use of the self-developing mechanism of nitrocellulose when functioning as an ion beam resist, we describe a simple model predicting the new implantation profile and, in particular, the concentration enhancement obtained at the surface of the substrate. The model whose fundamentals and related mathematical derivations are given, is critically dependent on the diffusion mechanism of the implanted ions in the substrate. Comparison between simulated and preliminary experimental implantation profiles of Cs in polyparaphenylenesulfide is made and does not show a major divergence considering that the only diffusion mechanism taken into account is the thermal diffusion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105832
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Self-development rate of resists exposed to energetic ions (10 keV - 500 keV)
    Amsterdam : Elsevier
    Microelectronic Engineering 6 (1987), S. 479-485 
    Details
    ISSN: 0167-9317
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0167-9317(87)90077-3
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Helium ion irradiated polyamidoimide films: a FT-IR and Raman follow-up (1994)
    Springer
    Journal of materials science 13 (1994), S. 286-288 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00571778
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...