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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4733-4750 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Numerical simulation of the gallium arsenide permeable base transistor has been performed through solutions to the drift and diffusion equations in two dimensions. First, scaling of the device to increase the current and frequency has been investigated. The various scaling approaches used are discussed in detail. Second, the sensitivity of the device performance to the device parameters such as base penetration, channel opening, etc., has been studied. Third, the effect of material characteristics on the cutoff frequency has been investigated. A new design incorporating a semi-insulating region around the base is proposed and studied in detail. This new design is shown to reduce the amount of unwanted stored charge upstream of the base and to result in increased cutoff frequencies.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2148-2157 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recently it has been recognized that the neutral gas in inductively coupled plasma reactors heats up significantly during processing. The resulting gas density variations across the reactor affect reaction rates, radical densities, plasma characteristics, and uniformity within the reactor. A self-consistent model that couples the plasma generation and transport to the gas flow and heating has been developed and used to study CF4 discharges. A Langmuir probe has been used to measure radial profiles of electron density and temperature. The model predictions agree well with the experimental results. As a result of these comparisons along with the poorer performance of the model without the gas–plasma coupling, the importance of gas heating in plasma processing has been verified. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 901-903 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The continual scaling down of complementary metal–oxide semiconductor feature size to 100 nm and below necessitates a characterization technique to resolve high-aspect-ratio features in the nanoscale regime. We report the use of atomic force microscopy coupled with high-aspect-ratio multiwalled carbon nanotube (MWCNT) scanning probe tip for the purpose of imaging surface profile of photoresists. MWCNT tips of 5–10 nm in diameter and about a micron long are used. Their exceptional mechanical strength and ability to buckle reversibly enable resolution of steep, deep nanoscale features. Images of photoresist patterns generated by 257 nm interference lithography as well as 193 nm lithography are presented to demonstrate MWCNT scanning probe tips for applications in metrology. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 910-912 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate integration of carbon nanotubes into large scale vertically aligned electrode arrays, by filling the as-grown samples with conformal SiO2 using chemical vapor deposition. Subsequent mechanical polishing yields a flat surface with only the very ends of the nanotube array exposed. The electronic properties of individual carbon nanotubes in the array are measured using current-sensing atomic force microscopy. These vertical nanotube arrays are suitable for fabricating various electronic devices and sensors. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6432-6440 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a model to study high density plasma reactors used in semiconductor processing. The model is based on a continuum approach with conservation equations for mass, momentum, and energy in a multicomponent, multitemperature system. The governing equations are radially averaged to obtain a one-dimensional model for the transport of neutrals and charged species in the flow direction. Processes at the radial wall are properly included as source/sink terms by weighting with surface area to volume ratio. The model is applied to an electron cyclotron resonance reactor and simulations of an argon discharge are presented for pressures in the range of 1–10 mTorr and flow rates of 5–80 sccm. The predictions of plasma density, electron and gas temperatures, pressure, and neutral density are consistent with experimental observations and compare favorably with data. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2250-2259 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A fluid model based on the three moments of the Boltzmann equation is presented to study rf discharges. With rate constants obtained from a zero-dimensional Boltzmann equation solver, the model is shown to reproduce excitation wave forms seen in experiments. Several other critical features previously reported by particle-in-cell simulations such as mechanisms of heating and relation between electron power deposition and ionization have also been reproduced. A parametric study for a 13.56-MHz argon discharge with varying rf bias and pressure has been used to derive scaling laws for the discharge.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3584-3584 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1345-1351 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a coupled model for neutral transport and charged species dynamics in high density plasma processing reactors. The model consists of conservation equations for mass, momentum, and energy within a multicomponent, multitemperature framework. The radially averaged one-dimensional model is applied to an electron cyclotron resonance CF4 discharge and results are presented for various pressures and flow rates. The pressure drop in the reactor is found to be significant compared to the pressure itself in high density, low pressure reactors which affects the plasma, and flow characteristics significantly. The nature of the viscous pressure drop in the reactor is also confirmed by two-dimensional fluid dynamics simulations of only the gas flow. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1506-1512 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A self-consistent continuum model is presented for glow discharges based on the moments of the Boltzmann transport equation. The resultant set of governing equations consist of continuity and momentum equations for electrons and ions, an energy conservation equation for electrons and Poisson's equation. An efficient numerical scheme to solve the set of coupled equations is presented. Results from case studies of dc discharges are used to illustrate the model. A parametric study varying the cathode voltage, gas pressure, and secondary electron emission coefficient predicts many of the well-known features of dc discharges.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2574-2579 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analysis based on numerical solutions to the three moments of the Boltzmann equation is presented for magnetron discharges used in plasma processing of electronic materials. A chlorine discharge at 13.56 MHz is studied and the results are compared for discharges with and without the magnetic field. The charged particle densities increase by a factor of 5 and the ionization rate increases by an order of magnitude with the application of a 100 G magnetic field in a 50 mTorr discharge. The sheaths in the magnetron discharge are thin and the sheath electric field decreases with increasing magnetic field. The bulk ohmic heating is the dominant mechanism for power deposition under the conditions investigated here.
    Type of Medium: Electronic Resource
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