ISSN:
0142-2421
Keywords:
Chemistry
;
Polymer and Materials Science
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Physics
Notes:
Optical second harmonic generation (SHG) has been applied to the study of the silicon-insulator (S—I) interface. Results from real-time measurements of the SHG intensity during etching process of SiO2 and Si3N4 insulator layers are presented and analysed taking into consideration various contributions to the nonlinear polarization in the S—I interface such as the silicon substrate, the static electric field, the inhomogeneous deformation and the crystalline oxide interlayer. The symmetry properties of the silicon-insulator interface have also been determined by an analysis of the SHG rotational dependences.
Additional Material:
3 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/sia.740220176
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