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  • 1
    Electronic Resource
    Electronic Resource
    The optical processes in AlInP/GaInP/AlInP quantum wells (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4592-4598 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical processes in AlInP/GaInP/AlInP quantum wells free from long-range ordering are examined by photoluminescence (PL), photoluminescence excitation (PLE), and photoreflectance (PR) measurements. The PL method observes lower transition energy than the PLE and the PR methods which observe the space-averaged transition energy. This is because PL originates from localized lower-energy states to which an exciton state relaxes. By analyzing these measurements carried on 20- and 60-A(ring)-wide wells, the reason for this deviation is ascribed to the fluctuation of the transition energy due to the local variation of the well width by one molecular layer. The plausible share of the band offset for the conduction band against the energy gap difference at the Γ point is obtained by comparing the experimentally obtained relative position of the energy levels in AlInP barriers and the 20 A(ring) GaInP well with the calculated ones. This is found to be 0.75 (±0.06). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363829
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  • 2
    Electronic Resource
    Electronic Resource
    Temperature dependence of the band-gap energy of disordered GaInP (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5326-5331 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature variation of the photoluminescence peak energy of GaxIn1−xP shows a complex dependence on the structural order; however, such effects are not well explained even for the fully disordered material. The band-gap energy of disordered GaxIn1−xP was measured at temperatures from 10 to 300 K and the measured values were used to find the best parameters in a theoretical equation. Since a simpler expression does not fit the experimental data accurately (especially below 30 K), an expression consisting of three terms which represent the effect of thermal expansion, electron–optical-phonon coupling, and electron–acoustic-phonon coupling was adopted. Dividing an electron-phonon coupling term into two terms results in a better expression for InP over the entire range of measuring temperatures. This function was applied to disordered GaxIn1−xP (x=0.5, 0.7). It is found that in InP the electron–acoustic-phonon coupling is stronger than electron- optical-phonon coupling, while in GaxIn1−xP the opposite is true.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355735
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  • 3
    Electronic Resource
    Electronic Resource
    Study on photoluminescence and Raman scattering of GaInP and AlInP grown by organometallic vapor-phase epitaxy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 793-796 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence and Raman scattering spectra of GaInP and AlInP grown by organometallic vapor-phase epitaxy are measured to investigate the ordered and disordered crystalline states. It is found that ordered structure exists not only in the GaInP but also in the AlInP, and probably in the entire AlGaInP system, and that zinc doping over 1018 cm−3 makes it disordered. This disordering effect is attributed to the Zn diffusion in the GaInP epilayer during crystal growth which puts the once-formed ordered atomic arrangement into a disordered state.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341926
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  • 4
    Electronic Resource
    Electronic Resource
    Anomalous temperature dependence of the ordered Ga0.5In0.5P photoluminescence spectrum (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1760-1762 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the photoluminescence spectrum of Ga0.5 In0.5 P/GaAs grown by organometallic vapor phase epitaxy is measured. Samples with a highly long-range ordered structure show anomalous behavior, where peak energy changes with temperature exhibiting Z-shape dependence. In the range between 100 and 30 K, peak energy decreases monotonously with decreasing temperature, and below 30 K, begins to increase, splitting into two peaks. The most probable cause of this behavior is crystal defects related to the long-range ordered structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101283
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  • 5
    Electronic Resource
    Electronic Resource
    Influence of growth temperature on crystalline structure in Ga0.5In0.5P grown by organometallic vapor phase epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2053-2055 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The relation between growth temperature and ordered structures in Ga0.5In0.5P grown using organometallic vapor phase expitaxy is investigated using transmission electron diffraction, electroreflectance, and Raman scattering measurements. It is found that generation of the ordered structure is not related to the immiscibility of this alloy and that the ordered structures do not simply represent "sublattice ordering.'' The anomalous band gap may be a consequence of the variation in the atomic arrangement of neighboring atoms, but not of the long-range ordered structure itself.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100317
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  • 6
    Electronic Resource
    Electronic Resource
    Erratum: "The optical process in AlInP/GaInP/AlInP quantum wells" [J. Appl. Phys. 80, 4592 (1996)] (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5876-5876 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366457
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  • 7
    Electronic Resource
    Electronic Resource
    Raman scattering from AlGaInP (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 2001-2003 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman scattering spectra from AlGaInP quaternary alloys grown on GaAs substrates are measured. Dominant peaks observed are identified as AlP-, GaP-, and InP-like longitudinal optical modes. Mode frequency is seen to change almost linearly with aluminum composition, exhibiting the "partly three-mode type'' behavior.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98273
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  • 8
    Electronic Resource
    Electronic Resource
    Temperature dependence of photoluminescence intensity from AlGaInP/GaInP-quantum well structures (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 1336-1344 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence (PL) intensity of AlGaInP/GaInP-quantum well structures under a continuous excitation condition was measured as a function of the crystal temperature (10–450 K). The thermal emission of carriers from the well layers to the barrier layers was investigated by generating the carriers only in the wells. The dependence of the PL intensity on the crystal temperature was analyzed by fitting a model function to the experimental results. The rapid decrease in PL intensity at temperatures higher than 200 K was found to be probably due to the emission of carriers into the barrier layers. The effective barrier heights obtained by the fitting are in good agreement with the band-energy alignment schemes of these crystals. When AlInP barrier layers were inserted directly beside the quantum wells, the emission of carriers to the quaternary layers through the AlInP layers was reduced, resulting in stronger PL intensity at higher temperatures and a larger effective barrier height. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365907
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  • 9
    Electronic Resource
    Electronic Resource
    Selective growth of gallium nitride layers with a rectangular cross-sectional shape and stimulated emission from the optical waveguides observed by photopumping (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 976-978 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selective growth of GaN layers on sapphire substrates is investigated for low-loss optical waveguide structures of active and passive photonic devices. When growth conditions, such as nitridation of the substrate surface and growth temperature, are adjusted to achieve high-density uniform nucleation on the substrate, we found that the cross-sectional shape of GaN waveguides has a rectangular structure with smooth top and side surfaces. At 77 K, we observed stimulated emission from the cleaved facet of an optically pumped selectively grown GaN waveguide with a width of 6 μm and a cavity length of 800 μm. Line narrowing was also achieved: with the full width at half-maximum of the emission spectra decreasing from 11 to 2 nm by increasing a pump power density from 0.013 to 0.05 MW/cm2. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116117
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