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  • 1
    ISSN: 1248-9204
    Keywords: Hiatal hernia ; Fundoplication ; Recurrences ; Mechanisms
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary The conventional hiatal hernia repair is a tension repair. Large defects such as those associated with an intrathoracic stomach can have a high rate of recurrence resulting in esophageal symptoms and in some instances gastric strangulation. Numerous additive procedures are used to secure the stomach in the abdominal cavity including mesh buttressing, fundoplication, anterior abdominal wall gastropexy and fundus diaphragmatic suture fixation. The optimal repair is unknown primarily because crura closure failure is poorly understood. A literature review was used to determine the proven causes of hiatal hernia recurrence. Early postoperative vomiting, surgeon inexperience, short esophagus and no crus closure are documented causes. In a series of 19 hiatal hernia recurrence repairs from our institution, additional causes such as suture pull-out and trauma have been established as additional mechanisms of recurrence. Increased intra-abdominal pressure associated with motor vehicle accidents was the precipitating factor in 2/19 patients. Suggested methods for prevention of hiatal disruption and resultant hernia are proposed which include: a postoperative antiemetic regimen, restricted activity in the early postoperative period, an assessment technique for the short esophagus when utilizing a laparoscopic approach, crus closure calibration and inclusion of the diaphragmatic fascia when performing hiatal closure for large paraesophageal hernias and the short esophagus.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Archives of Biochemistry and Biophysics 264 (1988), S. 383-391 
    ISSN: 0003-9861
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Nephrology 3 (1997), S. 0 
    ISSN: 1440-1797
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Summary: A retrospective analysis of 67 biopsy proven cases of focal segmental glomerulosclerosis (FSGS) in children was performed. After a mean duration of disease of 48.5 ± 44 months, 20 patients (30%) achieved sustained remission (SR), 23 (34%) had frequent relapses (FR) and 24 (36%) were steroid non-responders (NR). the NR group had a significantly higher mean age of onset 9.1 ± 1.01 years (P= 0.003) and had higher number of females (P= 0.0009). They also had a significantly higher prevalence of microhaematuria as compared to FR and SR groups (P= 0.002). the initial steroid response category (P〈0.00001) and the percentage of glomeruli with segmental sclerosis on histopathology (P= 0.001) correlated with the subsequent outcome. During this period six children developed progressive renal failure and all of them belonged to NR group (25%). There were four deaths and all of them were non-responders (16.6%). Features predictive of a poor therapeutic outcome in childhood FSGS are age of onset more than 9 years, female sex, microhaematuria, renal dysfunction at onset, initial non-response to steroids and percentage of glomeruli with segmental sclerosis on histopathology.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 13 (2001), S. 177-191 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results are presented for finite element simulation of three-dimensional unsteady flows past cylinders of low aspect ratio. The end-conditions are specified to model the effect of a wall that may correspond to the flow in a wind tunnel, water channel or a tow-tank experiment with a cylinder having large end-plates. Results are computed for Reynolds number 100, 300, and 1000 for a cylinder of aspect ratio 16. The computations confirm that it is the end conditions for the finite cylinder that determine the mode of vortex shedding (parallel or oblique). Preliminary results for Re=106 flow past a cylinder of aspect ratio 8 are also presented. The Re=100 and 1000 flows exhibit oblique mode of vortex shedding. The flow for Re=100 is very organized, devoid of any vortex dislocations and is associated with only one cell along the cylinder span. The flow at Re=1000 is interspersed with vortex dislocations and the vortex shedding angle varies, both, temporally and spatially. The presence of vortex dislocations is responsible for the breakdown of spanwise coherence of vortex structures. Mode B pattern of vortex shedding is observed. Flow at Re=300 results in flow patterns that correspond to the wake transition regime. Mode A and Mode B patterns of vortex shedding in addition to vortex dislocations are observed at different time instants. The present results indicate that the wake transition regime, that is known to occur in the Re range 190–250 for large aspect-ratio cylinders, is either extended and/or delayed for a cylinder of small aspect ratio with "no-slip" walls. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3677-3681 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Contact resistance measurements, x-ray double-crystal diffraction, and Auger electron spectroscopy were used to evaluate reactive ion etch (RIE) damage to silicon wafers. Wafers were exposed to plasmas at different powers with gas mixtures of CHF3/O2 and O2 only. The CHF3/O2 mixture was typical of a gas mixture used for etching contacts to silicon. The O2 alone was used as a damaging, bombarding gas. Some oxidation of silicon occurs during the O2 bombardment. However, O2 was used to determine the effects of ion bombardment at conditions similar to those that occur during RIE etching of contacts. It has been found that the depth of damage to the underlying silicon increases with cathode bias and that at −550 V the damage is 200–250 A(ring) deep. The damage at −550 V consists of two layers: one is an amorphous and/or polycrystalline silicon layer at the surface 100–125 A(ring) thick. The surface layer contains impurities as a result of the reactive ion etch process. The second single-crystal dilated layer, 100–125 A(ring) thick, lies beneath the amorphous/poly Si layer. The thickness of these layers is the same when either CHF3/O2 or O2 alone are used as the etchant gases.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Solid State Electronics 27 (1984), S. 267-273 
    ISSN: 0038-1101
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Thermochimica Acta 93 (1985), S. 101-104 
    ISSN: 0040-6031
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Thermochimica Acta 89 (1985), S. 195-202 
    ISSN: 0040-6031
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Physiologia plantarum 17 (1964), S. 0 
    ISSN: 1399-3054
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Physiologia plantarum 18 (1965), S. 0 
    ISSN: 1399-3054
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Type of Medium: Electronic Resource
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