ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The main electronic characteristics of silicon carbide (SiC) are its wide energy gap, highthermal conductivity, and high break down electric field which make of it of one of the mostappropriate materials for power electronic devices. Previously we reported on a new electricalconductivity evaluation method for nano-scale complex systems based on our original tight-bindingquantum chemical molecular dynamics method. In this work, we report on the application of ourmethodology to various SiC polytypes. The electrical conductivity obtained for perfect crystalmodels of 3C-, 6H- and 4H-SiC, were equal to 10-20-10-25 S/cm. For the defect including model anextremely large electrical conductivity (of the order of 102 S/cm) was obtained. Consequently theseresults lead to the conclusion that the 3C-, 6H-, and 4H-SiC polytypes with perfect crystals haveinsulator properties while the electrical conductivity of the crystal with defect, increasessignificantly. This result infers that crystals containing defects easily undergo electric breakdown
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.497.pdf
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