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  • 1
    Electronic Resource
    Electronic Resource
    Photoluminescence excitation spectroscopy of GaxIn1−xAsyP1−y/InP quantum wells (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1611-1613 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence excitation measurements were performed on GaxIn1−xAsyP1−y/InP single quantum wells. The results were analyzed with a k⋅p approach. Using the effective masses reported in the literature, the ratio of the discontinuities in the conduction and valence band is found to be 35:65. This is in good agreement with a ratio of 37:63, obtained directly from an observed transition involving free holes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99927
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  • 2
    Electronic Resource
    Electronic Resource
    Atomic abruptness in InGaAsP/InP quantum well heterointerfaces grown by low-pressure organometallic vapor phase epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 971-973 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality quantum well structures of InGaAsP (λ=1.55 μm)/InP were grown by low-pressure organometallic vapor phase epitaxy on 0.2° and 2° misoriented (001) InP substrates. Multiple-line 2 K photoluminescence emission was observed for the first time from thin quantum wells of InGaAsP grown on 0.2° misoriented substrates. The multiple-line emission is interpreted to result from half-monolayer well width variations within one well with lateral sizes larger than the excitonic radius. Quantum wells grown on substrates with 2° misorientation showed generally wider single-line photoluminescence emission due to well width variations within one well with lateral sizes smaller than the excitonic radius. The studied well thicknesses ranged from ≈70 A(ring) down to ≈4 A(ring), which showed emission as short as 905 nm (1.37 eV) corresponding to a spectral upshift of 514 meV. The very high quality of the quantum wells of InGaAsP is indicated by a 2 K photoluminescence linewidth of 8.8 meV for a ≈6 A(ring) well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100084
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Photoluminescence of Zn-diffused and annealed InP (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5549-5553 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ampoule diffusion of Zn in InP gives rise to donor-acceptor photoluminescence transitions with peak positions dependent on the rate of cooling after diffusion. Subsequent annealing in an atmosphere without Zn causes a change in peak position. Luminescence peaks between 1.30 and 1.38 eV are found. These peaks are described as being due to transitions between various Zn interstitial donor levels and the Zn substitutional acceptor level. The luminescence results are correlated with results of secondary ion mass spectrometry and Schottky barrier capacitance-voltage measurements, and are consistent with an earlier model in which Zn diffuses as an interstitial donor and is incorporated both as an interstitial donor and as a substitutional acceptor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343659
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  • 4
    Electronic Resource
    Electronic Resource
    New deep level luminescence bands observed from both a SiGe alloy layer and Si/Ge superlattice structures (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2579-2581 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence measurements have been made on Si/Ge short period superlattice structures grown on a SiGe alloy buffer layer and on a similar SiGe alloy layer without a superlattice. Using an InSb detector with a low energy cutoff at ∼450 meV, the major luminescence features observed were two broad bands with maximum intensities at ∼530 and ∼720 meV. The luminescence intensity was found to vary with the superlattice composition but was substantially stronger for the SiGe alloy layer without a superlattice. We ascribe these luminescence features to defects in the SiGe alloy layers. This is supported by the observation that the introduction of deliberate copper contamination at 600 °C dramatically increases the photoluminescence signal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105908
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  • 5
    Electronic Resource
    Electronic Resource
    Photoluminescence from Si/Ge superlattices (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 340-342 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the luminescence of short-period Si/Ge superlattices of varying composition grown on a Si1−xGex alloy buffer layer. X-ray diffraction and Rutherford backscattering were used to analyze the composition of the samples. Luminescence bands at 1.5 and 1.6 μm originate from the superlattice, as is indicated by etching experiments. A strong change in luminescence intensity is observed as the composition and strain of the superlattice vary.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102802
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  • 6
    Electronic Resource
    Electronic Resource
    Observation of the optical analogue of quantized conductance of a point contact (1991)
    [s.l.] : Nature Publishing Group
    Nature 350 (1991), S. 594-595 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The argument of ref. 4 is based on the analogy with the recently discovered quantization of conductance in ballistic electron transport9'10. The conductance of a point contact in a two-dimensional electron gas increases in steps of 2e2/h as its width is increased (e is the charge on an electron). ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/350594a0
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  • 7
    Electronic Resource
    Electronic Resource
    Enhancement of superconductivity by quasiparticle injection. II. Critical current experiments (1987)
    Springer
    Journal of low temperature physics 69 (1987), S. 287-311 
    Details
    ISSN: 1573-7357
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Measurements are presented on the enhancement of the critical current in narrow aluminum strips subjected to quasiparticle injection. A new sample design incorporating dual injector junctions has been used to decouple the injection and transport currents. Comparison of the the experimental data with the model presented in a companion paper demonstrates that the enhancement of superconductivity by quasiparticle injection can be satisfactorily explained using an extended version of the Eliashberg theory. The results provide no evidence for the existence of an additional mechanism for critical current enhancement as suggested by Seligson and Clarke.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00682663
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  • 8
    Electronic Resource
    Electronic Resource
    Enhancement of superconductivity by quasiparticle injection. I. Model analysis (1987)
    Springer
    Journal of low temperature physics 69 (1987), S. 265-286 
    Details
    ISSN: 1573-7357
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Nonequilibrium phenomena in the two electrodes of high-current-density superconducting tunnel junctions are analyzed. The quasiparticle injection-induced enhancement of the energy gaps as well as of the critical current of one of the electrodes are considered. A graphic approach is employed to solve the coupled gap equations for both films. Multiple-gap states are found at voltages close to the sum and difference of the two gaps. If a large transport current is passed through one of the electrodes, multiple stable solutions of the gap equations occur at most bias voltages. Because each solution has its own critical current level, the nonequilibrium critical current is no longer a simple single-valued quantity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00682662
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