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  • 1
    Electronic Resource
    Electronic Resource
    Simultaneous Synthesis and Consolidation of W-Added ZrB〈sub〉2〈/sub〉 by Pulsed Electric Current Pressure Sintering and their Mechanical Properties (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 561-565 (Oct. 2007), p. 527-530 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Dense zirconium boride (ZrB2)-based materials with and without tungsten (W) have beenfabricated directly from mixtures of constituent elemental powders by pulsed electric currentpressure sintering (PECPS) at 1800°C for 10 min under 30 MPa in a vacuum. Formation processesof monolithic, W-doped ZrB2 solid solutions (Zr1-xWx)B2 (0〈x≤0.12), and composites consisting ofZrB2(ss) and WB2 were investigated. Their mechanical properties of Vickers hardness (Hv), fracturetoughness (KIC), and bending strength (σb) at room temperature were evaluated. Solid solution andcomposite materials gave higher Hv (~20.7 GPa), KIC (∼4.4 MPam1/2), and σb (~600 and 690 MPafor the former and the latter, respectively) than those (14.1 GPa, 3.21 MPam1/2, and ~500 MPa) ofthe monolithic ZrB2 fabricated under the same conditions. Furthermore, the latter two materialsexhibited excellent high-temperature σb values (~550-600 MPa) up to 1600°C in N2, in comparisonwith that (~320 MPa) of monolithic ZrB2 materials
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.561-565.527.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Oxidation Resistance of Multiwalled Carbon Nanotubes Coated with Silicon Carbide (2004)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 87 (2004), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Multiwalled carbon nanotubes (MWCNTs) were coated with a SiC layer using SiO vapor. The growth mechanism of SiC and the oxidation resistance of the SiC-coated MWCNTs were studied. The growth of the SiC layer was controlled by adjusting the partial pressure of CO2 using carbon felt placed in a crucible. The nanometer-sized SiC particles were deposited onto the tubes by the reaction between SiO(g) and CO(g). On the other hand, the thin surface of the MWCNTs was converted to the SiC layer when the carbon felt was not used. The oxidation durability of MWCNTs was improved by the SiC coating. MWCNTs were oxidized completely in air at 650°C for 60 min. However, about 90 mass% of the SiC-coated MWCNTs remained after the same oxidation test.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1551-2916.2004.00804.x
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  • 3
    Electronic Resource
    Electronic Resource
    Growth Mechanism of Nanometer-Sized SiC and Oxidation Resistance of SiC-Coated Diamond Particles (2004)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 87 (2004), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Diamond particles were coated with a thin SiC layer by the reaction of SiO vapor with diamond, and the growth mechanism of SiC as well as the oxidation resistance of the SiC-coated diamond were studied. The growth process of the SiC layer can be separated into two steps. In the first step, a thin layer of SiC with a thickness of about 15 nm is formed due to the reaction between SiO vapor and diamond. In the second step, nanometer-sized SiC granules are deposited on the SiC layer by the reaction between SiO vapor and CO. The apparent activation energy for the formation of SiC layer on diamond was found to be 100 kJ/mol. This value suggests that the SiC coating process occurred mainly by vapor-phase reaction. The oxidation resistance of the SiC-coated diamond was improved depending on the thickness of the SiC layer. Oxidation of the SiC-coated diamond particles began at 950°C, which was 400°C higher than that of uncoated diamond.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1551-2916.2004.00809.x
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  • 4
    Electronic Resource
    Electronic Resource
    Suppression of Active Oxidation of Polycarbosilane-Derived Silicon Carbide Fibers by Preoxidation at High Oxygen Pressure (2003)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 86 (2003), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Three types of polycarbosilane-derived SiC fibers (Nicalon, Hi-Nicalon, and Hi-Nicalon S) with different SiO2 film thicknesses (b) were subjected to exposure tests at 1773 K in an argon-oxygen gas mixture with an oxygen partial pressure of 1 Pa. The suppression effect of a SiO2 coating on active oxidation was examined through TG, XRD analysis, SEM observation, and tensile tests. All the as-received fibers were oxidized in the active-oxidation regime. The mass gain and the SiO2 film development showed a suppression of active oxidation at b values of ≧0.070 μm for Nicalon, ≧0.013 μm for Hi-Nicalon, and ≧0.010 μm for Hi-Nicalon S fibers. Considerable strength was retained in the SiO2-coated fibers. For Hi-Nicalon fibers, the retained strength was 71%–90% of the strength in the as-received state (2.14–2.69 GPa).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2003.tb03384.x
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  • 5
    Electronic Resource
    Electronic Resource
    Oxidation Behavior of Si-C-O Fibers (Nicalon) under Oxygen Partial Pressures from 102 to 105 Pa at 1773 k (2000)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 83 (2000), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Polycarbosilane-derived SiC fibers (Nicalon) were oxidized at 1773 K under oxygen partial pressures from 102 to 105 Pa. The effect of oxygen partial pressure on the oxidation behavior of the Nicalon fibers was investigated by examining mass change, surface composition, crystal phase, morphology, and tensile strength. The Nicalon fibers were passively oxidized under oxygen partial pressures of 〉2.5 ×102 Pa and actively oxidized under an oxygen partial pressure of 102 Pa. Under oxygen partial pressures from 2.5 × 102 to 103 Pa, active oxidation occurred at the earliest stage of oxidation, resulting in the formation of both a silica film and a carbon intermediate layer. Although the unoxidized core retained considerable levels of strength under the passive-oxidation condition, fiber strength was lost under the active-oxidation condition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2000.tb01681.x
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