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  • 1
    Electronic Resource
    Electronic Resource
    Excitonic state in quantum wells formed from “above-barrier” electronic states (1999)
    Springer
    JETP letters 70 (1999), S. 621-627 
    Details
    ISSN: 1090-6487
    Keywords: 71.35.Cc ; 78.66.Fd
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Lines corresponding to localized excitonic states formed from “above-barrier” electron and/or hole states (specifically, excitation lines of excitons formed by an electron localized in a QW and a free heavy hole) have been observed in the photoluminescence excitation spectra of GaAs/Al0.05Ga0.95As structures with quantum wells (QWs), each containing one single-particle size-quantization level for charge carriers of each type. A computational method is proposed that permits finding the binding energy and wave functions of excitons in QWs taking the Coulomb potential into account self-consistently. The computed values of the excitonic transition energies agree quite well with the experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.568225
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Dielectric enhancement of excitons in semiconducting quantum wires (1997)
    Springer
    Journal of experimental and theoretical physics 84 (1997), S. 151-155 
    Details
    ISSN: 1090-6509
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The energy of the exciton ground state in a semiconducting cylindrical quantum wire surrounded by a dielectric has been calculated using a variational technique accounting for the effect of dielectric enhancement. The effect of dielectric enhancement in such a system has been clearly demonstrated. Exciton parameters have been calculated for an intercalated leadiodide-based quasi-one-dimensional semiconductor and GaAs wires in asbestos nanotubes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.558144
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Optical properties of excitons in semiconductor (InP)-insulator quantum wires (2000)
    Springer
    Physics of the solid state 42 (2000), S. 544-547 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Features in the spectra of absorption, luminescence, and luminescence efficiency obtained under sample excitation with differently polarized laser radiation, and the nonlinear dependence of the luminescence intensity on the excitation level are explained as due to excitonic transitions in semiconductor (InP)-insulator (chrysotile asbestos) quantum wires. The measured excitonic-transition energies in the quantum wires are in quantitative agreement with calculations. The calculations took into account both the size quantization in a quasi-one-dimensional structure and the “dielectric enhancement” of excitons (the noticeable increase of the exciton binding energy and of the excitonic-transition oscillator strength associated with the increased attraction between the electron and the hole due to the large difference between the dielectric permittivities of the semiconductor and the dielectric matrix).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1131246
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    Paper (German National Licenses)
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