Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
67 (1990), S. 4159-4160
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The temperature dependence of electrical resistivity of Nd1.85Ce0.15CuO4−y was measured with oxygen partial pressure fixed at 2.08×10−1, 1.8×10−2, 8.1×10−4, and 3.3×10−6 atm. The oxygen partial pressure dependence of resistivity indicated that the charge carriers in Nd1.85Ce0.15CuO4−y were electrons. The temperature dependence of resistivity exhibited a linear metallic behavior at high temperatures and a semiconductorlike behavior at low temperatures, having a minimum at an intermediate temperature. Difficulties are pointed out in obtaining a unified view for the mechanism of normal electrical conduction in Nd1.85Ce0.15CuO4−y .
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.344978
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