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  • 1
    Electronic Resource
    Electronic Resource
    Cell mediated calcification in collagen gel cultures of fetal rat calvaria cells. Loss of gap junctions precedes calcification (1989)
    Springer
    Journal of bone and mineral metabolism 7 (1989), S. 6-17 
    Details
    ISSN: 1435-5604
    Keywords: Intercellular communication ; Gap junction ; Calcification ; Collagen gel ; Ultrastructure
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary To analyze the mechanism of initiation of cell-mediated calcification in hard tussue and its relationship to the frequency of gap junctions, enzymatically isolated cells from fetal rat calvaria cultured in collagen gels were observed ultrastructurally over a time course. Calcification was observed at 2–3 weeks after the initiation of culture when the seeding cellularity and the concentration of β-glycerophosphate were sufficiently high. In the collagen gels, round cells (R), spindle or stellate cells (S), and fat cells (F) were characterised morphologically. The ultrastructural features of initial calcification could be classified into 4 subtypes: 1) a large mass greater than 10 µm in diameter (Type I), 2) deposition associated with dead R cells or matrix vesicles (Type II), 3) intracellular deposition (Type III), and 4) other than Types I–III (Type IV). Type II was the most frequent (44.5%) and Type III was the least (6.8%). Gap junction was observed frequently between 1) R cells, 2) S cells, 3) between R cells and S cells. The frequency of gap junctions in collagen gels decreased statistically (X2-test; p〈0.001), when calcification was initiated. This cell culture system can be regarded as a useful model to analyze the initiation of cell mediated calcification in hard tissue. Gap junctions might function in cell communication and a decrease in their numbers could lead to cell death and, subsequently to calcification.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02399048
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Crystallographic Orientation Dependence of the Schottky Properties of Au/SrTiO3 Junctions (2000)
    Springer
    Journal of electroceramics 4 (2000), S. 299-303 
    Details
    ISSN: 1573-8663
    Keywords: metal/oxide interface ; Schottky junction ; chrystallographic orientation dependence ; ozone surface treatment ; intrinsic low permittivity layer
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Crystallographic orientation dependence of the Schottky properties of Au/Nb-doped SrTiO3 (STO:Nb) junctions has been investigated using single crystals of STO:Nb (1 0 0) and (1 1 1). It is found from electrical properties that the Schottky barrier height (SBH) of the Au/STO:Nb junctions estimated from current density (J)-voltage (V) characteristics shows crystallographic orientation dependence, while the flat band voltage estimated from capacitance (C)-voltage (V) characteristics is independent of the orientation. Displacement currents originated from the junction capacitance have been clearly observed at reverse bias voltage even in a condition of ∣dV/dt∣≥ 8.75 × 10−3 [V/s] because of large electrostatic permittivity of the STO, and the displacement currents also showed crystallographic orientation dependence. The different response in the electrical properties of the Schottky junctions suggests that electric properties of intrinsic low permittivity layers, which exist at Au/STO:Nb interfaces, have the crystallographic orientation dependence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1009950222736
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    Paper (German National Licenses)
    Fulltext
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