ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
4H-SiC SBDs have been commercialized for power application devices. However, themaximum current of these SBDs is 20A. In this work, we designed a JBS (junction barrierSchottky) diode structure and the fabrication processes to be optimized. The current and breakdownvoltage were over 100 A and 660 V at Ir = 1 mA/cm2, respectively. The recovery characteristics ofthe JBS diode are much superior to those of the Si-FRD while it is comparable to those of thecommercially available SiC-SBD at elevated temperatures up to 125°C
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.857.pdf
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