ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Amorphous silicon carbide (a-SiC) films were deposited using molecular dynamicssimulations employing the Tersoff potential. The structure and intrinsic stress of a-SiC films changeddramatically with changes in such principal deposition process parameters as substrate temperatureand incident energy. Changes in structure and intrinsic stress with deposition process parameters were analyzed
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/08/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.449-452.97.pdf
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