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  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ba-ferrite (BaM) sputtered films are suitable for a high density perpendicular recording medium.1 There were some problems to be solved in preparing BaM films. One of the most important problems is that a high substrate temperature Ts was necessary. Ts for preparing BaM films with c-axis dispersion angle Δθ50 as small as 2°–3° is about 620 °C and a high Ts limits the selection of substrate material. In this paper, Pb substituted BaM[(Ba⋅Pb)M] films were prepared by dc magnetron sputtering and their crystal structure and magnetic properties were studied. The substrate is a thermally oxidized silicon wafer. The target is a sintered ferrite disk (8 cm diameter) with stoichiometric composition of BaM and Pb content was controlled by the numbers of Pb chips on this disk. Argon and oxygen gas were introduced into a chamber and discharge gas pressure was set at 2 mTorr. Partial oxygen gas pressure was 0.01 mTorr and an applied power was 50 W. The thickness of (Ba⋅Pb)M films was about 1500 A(ring). The films prepared at Ts below 300 °C were amorphous and those prepared at Ts ranging from 300 to 400 °C consisted of spinel-like phase. Saturation magnetization Ms of these films was almost zero. The films prepared at Ts above 400 °C consisted of both hexagonal and spinel-like ferrites.2 Intensity of diffraction lines from hexagonal ferrite became strong as Ts was elevated and those for hexagonal ferrite were only from c-plane such as (004), (006), (008), (0010), (0012), and (0014). Usually, the lines from the (004), (0010), and (0012) planes cannot be observed in bulk BaM. This implies that the c axis is well oriented perpendicularly to the film plane. (Ba/Pb)M films prepared at Ts about 520 °C possess Δθ50 of about 1°, Hc⊥ of 1.0 kOe, and Ms of about 250 emu/cc.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4881-4883 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ba-ferrite (BaM) thin films were prepared by both a facing targets sputtering (FTS) system and dc magnetron sputtering (DCMS) at room temperature. They were successively annealed to crystallize. The films prepared by FTS system were crystallized at 650 °C, while those prepared by DCMS system were crystallized at 700 °C. Saturation magnetization, coercivity, and squareness ratio of the films prepared by FTS are 210 emu/cc, 3.3 kOe, and 0.7 in perpendicular direction, respectively, after the annealing at 650 °C. It was found that oxidized Fe is partially reduced to metallic Fe by high-temperature annealing. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe/Ta multilayered films were deposited on Si substrates by ion beam sputtering (IBS) by alternately using separate Fe and Ta targets. Thickness of Fe and Ta layers lFe and lTa bilayers lFe+lTa in specimen films and total thickness of multilayers films with 10 bilayers were constant at 100 and 1000 A(ring), respectively. For as-deposited films, coercivity Hc took minimum value of 0.15 Oe at lFe of 88 A(ring) and lTa of 12 A(ring), where saturation magnetization 4πMs was 18.3 kG. Films postannealed at 500 °C exhibited 4πMs of 19.1 kG, Hc of 0.05 Oe and μr of 1820. Fe:N/Ta:N multilayered films with N content of ∼10 at. % were deposited by bombarding N ions extracted from the subgun while the films were being grown. For as-deposited films, Hc took minimum value of 0.07 Oe and μr took maximum value of 1310 at lFe:N of 93 A(ring) and lTa:N of 7 A(ring), where 4πMs was 20.5 kG. Films postannealed at 500 °C exhibited 4πMs of 21.2 kG, Hc of 0.03 Oe and μr of 2380. Consequently, Fe/Ta and Fe:N/Ta:N multilayered films may be very suitable for magnetic cores in inductive heads for ultrahigh density recording. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The addition of Ta and N into sputtered Fe90Co10 alloy films was performed to attain soft magnetism with large saturation magnetization 4πMs. Addition of Ta below 8 at. % to Fe90Co10 films improved their crystallinity and the lattice constant of Fe crystallites was expanded. These films revealed relatively large 4πMs of about 21 kG. The deposition of Fe–Co and Fe–Co–Ta films at N2 partial pressure PN2 below 0.1 m Torr was so effective as to cause fine granulation in the film. Fe84.6Co8.4Ta7:N films deposited at PN2 of about 0.2 mTorr and postannealed at 150 °C revealed 4πMs and relative permeability μr of about 16 kG and 1500, respectively. © 1996 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6226-6228 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thin films of the Fe-Si-B alloy have been prepared by using an rf tetrode sputtering system, which can deposit the amorphous films with smaller Si and B contents by reducing the high energy of γ electrons. The as-deposited films with a composition of Fe80Si12B8 on the water-cooled substrates at room temperature were amorphous and exhibited the saturation magnetization 4πMs of 11.5 kG, the coercivity Hc of 15 Oe, the relative permeability μr of 43, and the magnetostriction constant λs of 18×10−6. Some of them exhibited 4πMs as large as 15.0 kG, Hc as very low as 0.01 Oe, μr as high as 7,530, and λs as small as 1.5×10−7 after immersion in water for one day.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6585-6587 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Soft magnetic Fe75Al10Si15 (Sendust) films were deposited on substrates separated from the high-energy plasma using the facing targets sputtering (FTS) apparatus. The Ar bias voltage VB was changed in the range of 0 to −150 V, and the substrate temperature Ts was adjusted in the range of 50∼400 °C. Films deposited at PAr of 1.0 mTorr and VB of −100 V possessed almost the same composition as that of the targets: Fe75Al10Si15. Films deposited at PAr=1.0 mTorr, VB=0 V and Ts=350 °C exhibited a saturation magnetization 4πMs=11.7 kG, a coercivity Hc=0.6 Oe, and a static relative permeability μrs=5000. On the other hand, films deposited at PAr=1.0 mTorr, VB=−100 V and Ts=50 °C exhibited 4πMS=12.0 kG, HC=0.4 Oe and μrs=8000. In addition, these films exhibited radio frequency relative permeability μrf of 2850 and 1050 at fM=10 and 50 MHz, respectively.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6447-6447 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It seemed to be possible to distort the Fe crystal lattice in Fe/Mn multilayers, because the atomic radii of α-Fe and α-Mn with cubic crystal lattice are 1.26 and 1.29 A(ring), respectively. It is very interesting to investigate how crystallographic and magnetic characteristics of the Fe/Mn multilayers were changed by modulating the thickness of Fe and Mn layers. In this study, 2000-A(ring)-thick Fe/Mn multilayers with sharp periodicity were deposited on plasma-free substrate Si wafer by the facing target sputtering method. The Ar gas pressure pAr was set at 2 mTorr. Deposition rates of Fe and Mn layers were 5 and 2 A(ring)/s, respectively. The thicknesses of Fe and Mn, δFe and δMn, were in the range of 20–200 A(ring) and 5–100 A(ring), respectively. The crystallites in Fe and Mn layers revealed the distinct orientation of α-Fe(110) and α-Mn(411) planes, respectively. The Fe(110) interplanar distance dFe increases from value close to Mn(411) interplanar distance dMn to that close to dFe with increase of the Fe layer thickness δFe in the range of 10–100 A(ring). The distortion of Fe crystal lattice increased with decrease of δFe and increase of interface number. The difference between the saturation magnetization 4πMs measured for the specimen multilayers and that calculated for the single layer films of simply diluted alloy increased with increase of δFe. However, 4πMs of the Fe layers in Fe/Mn multilayers did not changed with δMn except for the films with δFe as extremely small as 20 A(ring). And 4πMs took the value of nearly zero at δFe of 10 A(ring). In the range of δMn of 20–50 A(ring), the Fe lattice distortion was most remarkable and the coercivity Hc increased highly due to the large in-plane uniaxial anisotropy. Hc took its maximum value of about 70 Oe at δFe and δMn of 50 A(ring). This result may imply that the distortion of both layers are most remarkable. Consequently, it was confirmed that dFe and the crystallite size in Fe layers were changed and Hc was modified by modulating both δFe and δMn.
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  • 8
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A perpendicular magnetic recording tape requires a high magnetic anisotropy field Hk and a small distribution of the perpendicular magnetic anisotropy field σhk/Hk. It can be expected that by the extension of the interplane distance of (002) plane d(002) in Co-Cr, a perpendicular magnetic anisotropy energy will be increased and Hk becomes higher. It can be also expected that the σhk/Hk becomes smaller by the improvement of the crystallinity of Co-Cr film. Therefore, in order to achieve the above, the following experiments were attempted. At first, a small amount of Ta was added to Co-Cr. This, as a result, extended the d(002) of the Co-Cr from 2.033 to 2.046 A(ring). Consequently, Hk was increased from 4.4 to 5.1 kOe and σhk/Hk was reduced from 0.14 to 0.11. Second, as a sputtering gas, Kr gas was used instead of Ar gas. The use of Kr resulted in greater crystallinity in the film, increasing the peak intensity I(002) of x-ray diffraction of the Co-Cr-Ta from 2090 to 2500 cps. Consequently, σhk/Hk was reduced up to 0.07. Last, a recording and reproducing experiment with the Co-Cr-Ta tape was attempted with the use of a hilical-scan VTR machine. As a result, a reproduced output of 56 nVO-P (μm T m/s) was obtained at the recording wavelength of 0.33 μm. This figure is equivalent to the output at the recording wavelength of 0.66 μm of metal-powder tape.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5969-5971 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pb-substituted Ba-ferrite films were prepared at various substrate temperature Ts by dc magnetron sputtering and their crystallographic characteristics and magnetic properties were investigated. The substitution of Pb facilitates the crystallization and improves the crystallinity for hexagonal M phase. All of the films prepared at Ts above 460 °C exhibit a good c-axis orientation and the c-axis dispersion angle (Δθ50) for Pb-substituted Ba-ferrite films is as small as 1°. The coercivities (Hc⊥) and Hc(parallel)) and saturation magnetization Ms of Pb-substituted Ba-ferrite films are 0.7–1.0 kOe, 0.2 kOe and 250–300 emu/cm3, respectively.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6568-6570 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferrimagnetic Mn4N films have been successfully prepared at low process temperatures using the facing targets sputtering apparatus. The mixture gas of Ar and N2 with the ratio of N2 in pressure to total gas RN2 of 10% was optimal as the reactive working gas for depositing Mn4N films, since the deposition at excessive RN2 tended to cause the formation of Mn3N2 crystallites. In fact, they appeared in films deposited at RN2 higher than 30%. The film deposited at the substrate temperature Ts of 200 °C exhibited saturation magnetization 4πMs of about 300 G. The films prepared at Ts of 350 °C exhibited 4πMs and an in-plane coercivity Hc(parallel) of 450 G and 300 Oe, respectively. The films annealed at 400 °C in vacuum furnace exhibited 4πMs larger than about 510 G. However, the film annealed at temperature above 500 °C exhibited 4πMs smaller than 80 G.
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