ISSN:
1573-1979
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
Notes:
Abstract Gallium Arsenide technology has offered the promise of very high frequency operation but its potential has not been fully realized due to technological problems which have revealed themselves in undesirable and unpredictable device characteristics. This article presents measured DC characteristics for some current mirrors and transconductors which are believed to be important building blocks for future high-speed GaAs communication circuits. The results presented validate the building block designs within the measurement limitations and show that technology improvements are now producing devices of sufficient quality to allow a sophisticated approach to GaAs circuit designs.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00161306
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