ISSN:
1573-4854
Keywords:
porous silicon
;
phenylene vinylene oligomer
;
photoluminescence
;
electrical conduction
Source:
Springer Online Journal Archives 1860-2000
Topics:
Chemistry and Pharmacology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract Electrical and optical properties of diode structures based on porous silicon (PS) and thin films of phenylene vinylene oligomer (PVO) have been studied. Steady-state photoluminescence spectroscopy show that the structure of the luminescence band depends on the PS morphology. We assign the observed effect to the morphology-dependent penetration of PVO material into the pores. Current-voltage characteristics of the PVO/PS diodes are studied and interpreted assuming Schottky emission and hopping transport of carriers aspossible mechanisms of d.c. electrical conduction.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1009651408083
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