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  • 1
    Electronic Resource
    Electronic Resource
    Contrast of Basal Plane and Threading Edge Dislocations in 4H-SiC by X-Ray Topography in Grazing Incidence Geometry (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 600-603 (Sept. 2008), p. 321-324 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Dislocations in a substrate wafer of 4H-SiC with an epi-layer were observed usingtechnique of monochromatic synchrotron X-ray topography in a grazing incidence geometry. Sixdifferent Burgers vectors of basal plane dislocations and threading edge dislocations were identifiedby changing the Bragg reflections, and by analysis of images of dislocation. We identify somerelations of the Burgers vector and the dislocation contrast observed for g=11 2 8. Some of theserelationships are discussed in this report
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.321.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Slip of Basal Plane Dislocations in 4H-SiC Epitaxy (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 600-603 (Sept. 2008), p. 325-328 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Slip of basal plane dislocations in 4H-SiC epitaxy is observed by synchrotron reflectionX-ray topography. It is verified that average slip distance and slip thickness increase withdecreasing donor concentration of epilayer. Since N atom, which is incorporated at carbon site in4H-SiC and acts as a donor, has a smaller radius than that of C atom, lattice contraction effect isexpected due to incorporation of N. Considering difference of lattice contraction between thesubstrate and the epilayer owing to difference of donor concentration, strain in the epilayer isestimated. The strain is expected to increase with decreasing the donor concentration of epilayerand the results are explained from this point of view
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.325.pdf
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  • 3
    Electronic Resource
    Electronic Resource
    Observation of Misfit Dislocations Introduced by Epi-Layer Growth on 4H-SiC (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 600-603 (Sept. 2008), p. 309-312 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: 4H-SiC substrate wafers with epi-layers were observed using monochromatic synchrotronX-ray topography in grazing incidence geometries, to investigate the defects in the epi-layer. Misfitdislocations with b=+1/3[11 2 0] caused by the difference in lattice parameter between the epi-layerand the substrate were observed. The misfit dislocations are located near the interface as edgedislocations, and appear at the top surface as screw dislocations on basal planes. It was observed thatmore than half of them were introduced from the growing epi-layer surface. The misfit dislocationsand some screw dislocations with b=+1/3[11 2 0] are observed to remain as basal plane dislocationsat the surface, while other basal plane dislocations were converted to threading edge dislocations inthe epi-layer
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.309.pdf
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  • 4
    Electronic Resource
    Electronic Resource
    Cross-sectional observation of YBa2Cu3Oy/La0.7Ca0.3MnOz/YBa2Cu3Oy trilayered films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4095-4098 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cross-sectional observations of YBa2Cu3Oy/La0.7Ca0.3MnOz/YBa2Cu3Oy trilayered films on MgO (100) substrates were performed using transmission electron microscopy. Each layer grows epitaxially with crystal orientations of YBa2Cu3Oy(100)(parallel) La0.7Ca0.3MnOz(110) (parallel) YBa2Cu3Oy(100)(parallel) MgO(010). The Mn—O—Mn bond is parallel to the Cu—O—Cu bond. A reactant is absent at the interfaces and the La0.7Ca0.3MnOz layer is continuous until a thickness of about 7 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352241
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  • 5
    Electronic Resource
    Electronic Resource
    Possible mechanism of proximity effect coupled to spin fluctuation in YBa2Cu3Oy/magnetic manganese oxide/YBa2Cu3Oy junctions (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5344-5349 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Current-voltage characteristics were investigated for YBa2Cu3Oy/La1−xCaxMnOz or La1−xSrxMnOz(200 nm)/YBa2Cu3Oy junctions. The results are discussed together with electrical and magnetic properties of the barrier materials. Supercurrents passed through a 200-nm-thick magnetic barrier for certain values of x. The barrier materials did not necessarily have high electric conductivity in this region, but the ferromagnetism nearly disappeared. The results suggested the possible mechanism of a novel kind of proximity effect concerned with magnetism of the barrier.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351971
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  • 6
    Electronic Resource
    Electronic Resource
    Fabrication of YBa2Cu3Oy-La0.7Ca0.3MnOz-YBa2Cu3Oy coplanar junctions and their anisotropic current-voltage characteristics (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2681-2685 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two types of YBa2Cu3Oy-La0.7Ca0.3MnOz-YBa2Cu3Oy (YBCO-LCMO-YBCO) coplanar-type junctions with a 0.2 μm gap were fabricated by electron-beam lithography and Ar-ion-beam milling. One is a junction in which a current flows into the a-b plane (ferromagnetic spin arrangement) of the LCMO and then passes through the channel along the c axis (antiferromagnetic arrangement), and the other is a junction in which the current only passes through the a-b plane. In the former junction the current-voltage characteristics show nonlinearity which suggests a superconductive linkage, while the latter has linear characteristics. This anisotropy of the proximity effect is attributed to anisotropy of the spin structure, because the LCMO film has a small anisotropy of the normal decay length in the a-b plane and along the c axis.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354661
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  • 7
    Electronic Resource
    Electronic Resource
    Hydrogenation kinetics and defect termination of post-plasma-treated chemical-vapor-deposited amorphous silicon film (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3061-3068 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to study hydrogenation kinetics of post-plasma-treated chemical-vapor-deposited amorphous Si film, changes in bonding of Si and H, content of bonded hydrogen, the hydrogen profile in the depth direction of the film, and spin elimination were measured as functions of plasma exposure time and temperature (Tp) and film thickness. The activation energy of hydrogen diffusion estimated from the change of hydrogen content with Tp and exposure time was small, i.e., 0.2–0.4 eV in comparison with that of bond breaking diffusion (∼1.5 eV). Accordingly, bond breaking diffusion was minor for the post-hydrogenation of Si film by hydrogen plasma. All the observed physical quantities in this study could be explained by the fast diffusion of atomic hydrogen through weakly bound sites such as interstitials and its capture by reactive sites such as dangling bonds and weak SiSi bonds. For the capture process, preferential capture of the hydrogen by dangling bonds always occurred. The surface etching of the film, often observed in plasma hydrogenation experiments, was attributable to the evaporation of hydrosilane molecules created by adding hydrogen to the SiSi bond in the surface region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342699
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  • 8
    Electronic Resource
    Electronic Resource
    Structure and distribution of secondary defects in high energy ion implanted 4H-SiC (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 933-941 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure, size, and distribution of the secondary defects in high-energy B+ or Al+ implanted 4H-SiC were investigated by cross-sectional transmission electron microscope observations and secondary ion mass spectrometry analyses. Three types of defect structure were detected. The first (type I) is an extrinsic Frank partial dislocation loop parallel to {0001} and is same as that observed in kilo-electron-volt energy B+ or Al+ implanted SiC. The second (type II) is also an extrinsic dislocation loop with an extra Si–C bilayer parallel to {0001} but it has not been previously reported. The last type (type III) has no extra Si–C bilayer. The type of defect is correlated to the size of it. When the size is larger than about 12 nm, the defect becomes type I or type II and the defects which are smaller than about 12 nm are type III. The range of the secondary defect size depends on implanted ions and its dose. The maximum size of defects grows with dopant concentration and that in B+ implanted sample is larger than that in Al+ implanted one at the same volume concentration of dopant. But the minimum size of defects seems independent of dopant concentration and ion species. It is 2–4 nm in any case. These defects are distributed in the deeper region of projected range for low dose implantation. On the contrary, they are distributed from near surface for high dose implanted samples. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1331333
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  • 9
    Electronic Resource
    Electronic Resource
    Characterization of hydrogenation and dehydrogenation of post-plasma treated low-pressure chemical-vapor-deposited amorphous silicon films (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3740-3746 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Utilizing infrared spectroscopy, secondary ion mass spectroscopy, photoluminescence (PL), and electron-spin resonance measurements, we have characterized low-pressure chemical vapor deposition amorphous silicon films (a-Si) post-hydrogenated under various plasma treatment conditions, and annealed ones at various temperatures after plasma treatment. The amount of the total bonded hydrogen (NT,H) in the film brought about by hydrogen plasma varied with radio-frequency power, temperature, and exposure time. The depth of the bonded hydrogen layer increased according to the increase in NT,H, with increasing surface hydrogen concentration in the small NT,H region, and it almost kept the surface saturation of the hydrogen concentration in the larger NT,H region. The PL intensity increased in proportion to the increase of NT,H; it changed sharply at small NT,H, and then slowly at large NT,H. Two peaks appeared in the hydrogenated sample, the origin of which was explained by two differently strained states. The defect number decreased according to the increase of NT,H. However, a considerable amount of Si–Si bonds (300–700 bonds) was cleaved for annihilation of one defect by the hydrogenation. Annealing the post-hydrogenated samples above 400 °C caused a decrease of NT,H, regrowth of the defects, and an increase of Si–Si bond strain.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339258
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  • 10
    Electronic Resource
    Electronic Resource
    Difference of secondary defect formation by high energy B+ and Al+ implantation into 4H–SiC (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 4136-4142 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The difference of secondary defect formation between high-energy B+ and Al+ implanted layers was investigated by transmission electron microscopy. At the same volume concentration of implanted ions, the density of secondary defects in the Al+ implanted layers is higher than that in the B+ implanted layers and the mean defect size in the B+ implanted layers is larger than that in the Al+ implanted layers. These secondary defects are formed by agglomeration of self-interstitials and the amount of interstitials stored in the defects roughly coincides with that of implanted ions. This correlation does not depend on the ion species. The activation energies of secondary defect formation are not significantly different for B+ and Al+ implanted layers. B+ and Al+ implanted layers have different agglomerations of interstitials, which cause the differences of defect size and density. The difference does not originate from the self-diffusion of interstitials in implanted layers but is probably due to the initial nucleation of defects. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1457540
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