Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
73 (1998), S. 966-968
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Vacancy ordering was directly observed by high resolution transmission electron microscopy (HRTEM) at the heterointerface of GaSe/GaAs(100) grown by molecular beam epitaxy. Ga2Se3 crystalline film forms immediately to the GaAs (100) substrate, acting as an intermediate layer with thickness of 1.6–3.2 nm between the GaSe film and the GaAs substrate. Combining with fast Fourier transform analysis and simulations of HRTEM images and diffraction patterns, vacancy ordering in the Ga2Se3 was investigated. The vacancies preferably distribute on the (100) crystal planes of α-Ga2Se3 with a zinc-blende structure and the vacancy sheet appears on the planes of each three separated Ga sheets. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.122054
Permalink
Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |