ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
This paper describes the influence of the geometric component in the charge-pumpingmeasurement of 4H-SiC MOSFETs. Charge-pumping measurements were conducted on 4H-SiCMOSFETs with and without NO annealing. Charge-pumping measurements with different pulse-falltimes revealed that the geometric component exists in 4H-SiC MOSFETs and is especially large inthe unannealed MOSFETs. A sufficiently long fall-time is needed to minimize its effect, which isexpected to be 1–10 μs for 4H-SiC MOSFETs with a gate length of 10 μm
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.747.pdf
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