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Mobility and carrier density of rapid isothermally annealed antimony implanted (100) and (111) silicon (1985)

Jones, R. E. ; Li, B. Z. ; Oleszek, G. M.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 57 (1985), S. 2802-2805

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Details

ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Sheet resistance and Hall effect measurements were made on graphite strip isothermally annealed antimony implanted (100) and (111) silicon. Although the (111) silicon annealed at lower temperatures, the (100) silicon achieved a lower sheet resistance (∼40 Ω/(D'Alembertian) for a 3.8×1015 cm−3 dose) due to a greater activated carrier surface density. Supersaturated solid solutions were observed for both surfaces. At high active carrier concentrations ((approximately-greater-than)1×1020 cm−3), the rapid decrease of mobility with increasing carrier concentration is attributed to ionized impurity scattering.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.335463

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