ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Material properties of several lattice-mismatched InxGa1−xAs/InAsyP1−y (0.66〈x〈0.84, 0.29〈y〈0.66) alloys grown on InP substrates are investigated. The lattice constants and compositions were measured using x-ray diffraction and electron probe microanalysis. Photoluminescence, white light transmission, and detector cutoff wavelengths were used to determine the band gap of InxGa1−xAs as a function of In concentration x. The three methods agree to within 3%. The quality of the grown layers was also investigated using these techniques, in addition to cross-section transmission electron microscopy and Nomarsky optical microscopy. The dependence of the experimental measurements of band gap and lattice constant on material composition, measured by electron probe microanalysis, was compared against theoretical values. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.363699
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