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  • 1
    ISSN: 1432-0428
    Keywords: Keywords Insulin-dependent diabetes mellitus ; diabetic nephropathy ; angiotensin II receptor ; DNA polymorphisms ; genetics.
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary We investigated the contribution of polymorphisms in the angiotensin II type 1 receptor gene (AGTR1) to renal complications in an inception cohort of 152 insulin-dependent diabetic (IDDM) patients examined 15–21 years after diabetes onset. This nested case-control study included 79 normoalbuminuric control subjects and 73 cases with evidence of nephropathy ranging from microalbuminuria to overt proteinuria. Subjects were genotyped for two AGTR1 polymorphisms (T573→C and A1166→C), and an adjacent CA repeat microsatellite. Allele C1166 and the 140 bp allele of the microsatellite were more frequent among nephropathy cases than normoalbuminuric control subjects (0.322 vs 0.247, and 0.618 vs 0.521, respectively), but these differences were not statistically significant. Although not significant by themselves, the AGTR1 polymorphisms contributed significantly to the risk of diabetic nephropathy when accompanied by poor glycaemic control. Among patients with frequent severe hyperglycaemia during the first decade of diabetes, the relative risk of nephropathy among allele C1166 carriers was 12.1 (95 % CI: 3.7–39.8), whereas it was only 1.4 (95 % CI: 0.6–3.5) among allele A1166 homozygotes. The difference between relative risks was highly significant (χ 2 = 8.25, p = 0.004 with 1 df). A similar pattern of higher risk of microalbuminuria, specifically among those carriers of allele C1166 who had poor glycaemic control was also found in an independent study of a cross-sectional sample of 551 IDDM individuals, although the effect was smaller in magnitude. We conclude that DNA sequence differences in the AGTR1 gene may modify the noxious effects of hyperglycaemia on the kidney. Allele C1166 carriers might especially benefit from nephropathy prevention programmes. [Diabetologia (1997) 40: 1293–1299]
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Acta neurochirurgica 125 (1993), S. 181-183 
    ISSN: 0942-0940
    Keywords: Head injury ; cardiopulmonary resuscitation ; cerebral air embolism ; computerized tomography
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary Cerebral air embolism can occur in a number of situations. We report two cases of massive cerebral arterial air embolism following cardiopulmonary resuscitation, and its mechanism is discussed.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 0942-0940
    Keywords: CT finding ; subarachnoid haemorrhage ; posterior circulation aneurysm
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary This report describes our retrospective evaluation of CT features of the acute phase in 34 cases of ruptured cerebral aneurysms of the posterior cranial fossa. The results are as follows. 1. Examination of cisternal haematoma distribution revealed that SAH had extended to the supra- and infratentorial cisterns in 28 cases (82%). There were only 6 cases (18%) in which SAH was confined to the posterior cranial fossa only but even when there was subarachnoid haematoma in both the supra- and infratentorial cisterns, thick haematomas were seen at the periphery of the brain stem. In cases of vertebral artery-posterior inferior cerebellar artery aneurysms (VA-PICA AN), haematomas in the ambient cistern were thicker on the aneurysm side. In addition, in cases of basilar arterybifurcation (BA-Bifurcation AN) and basilar artery-superior cerebelli artery aneurysms (BA-SCA AN), there were many thick, highdensity haematomas in the interpeduncular cistern. 2. The rate of intracerebral haemorrhage was extremely low (1 patient). 3. The rate of intraventricular haemorrhage was high, and these haemorrhages demonstrated a reflux pattern. 4. The rate of hydrocephalus was high (76.5%) in comparison with that noted in association with SAH due to the rupture of anterior circulation aneurysms.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The use of ultrashort pulses (full width at half-maximum=1–100 ps) as a source of broadband, time-resolved radiation has high potential for application in microwave diagnostics for fusion plasmas. Here we report on the ultrashort-pulse reflectometry system developed for electron density profile and fluctuation measurements on the GAMMA 10 tandem mirror. The four-channel system (selectable frequencies of 8–17 GHz at 1 GHz intervals) measures the double-pass time-of-flight from the vacuum window to the cutoff layer. The hardware has an uncertainty of ±40 ps and can be operated at a repetition rate of 400 kHz. The system is operational, however, data from plasma experiments is unavailable at the moment. Results from a single-channel O-mode system show time-of-flight measurements consistent with values calculated from profiles obtained by a scannable single-channel interferometer. Fluctuation measurements are also consistent with results from a Fraunhofer diffraction diagnostic. These results suggest that with further refinements, ultrashort- pulse reflectometry will yield a simple yet reliable diagnostic for fusion devices. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 652-654 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Exciton resonance energies in an AlN epilayer on (0001) sapphire substrate grown by low-pressure metalorganic vapor phase epitaxy were determined as a function of temperature by means of optical reflectance (OR) and cathodoluminescence measurements. The OR spectra exhibited distinct reflectance anomalies at the photon energies just above the multiple internal reflection fringes, and the spectral line shape was fitted considering A (Γ7vu→Γ7c) and BC (Γ9v,Γ7vl→Γ7c) exciton transitions. The fitting gave the values of them at 0 K to be 6.211 and 6.266 eV, giving the crystal- field splitting (Δcr) of approximately 55 meV. The AlN film exhibited an excitonic emission even at 300 K, which is due to the small Bohr radius of excitons and large longitudinal optical phonon energies. The Einstein characteristic temperature aitch-thetaE was estimated to be 580 K. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 874-877 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A promising approach to obtain epitaxial films of oxide semiconductors was demonstrated, namely helicon-wave-excited-plasma sputtering epitaxy. Due to the surface-damage-free nature, completely a-axis-locked c(0001)-orientation ZnO epilayers were successfully grown on sapphire (0001) substrates having ultrasmooth surfaces with atomic steps. The ZnO epilayer exhibited a dominant near-band-edge photoluminescence (PL) peak at 300 K. Since the PL was considered to be due to the recombination of excitons bound to an impurity or a defect and certain tilting and twisting of the films were observed when Ar/O2 were used as sputtering gases, purification and optimization of the overall process are necessary to obtain improved epilayer qualities. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 4319-4321 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Radiative and nonradiative recombination dynamics in strained cubic (c-) In0.1Ga0.9N/c-GaN multiple quantum wells were studied using temperature-dependent time-resolved photoluminescence (TRPL) spectroscopy. In contrast to hexagonal InGaN quantum wells, low-excitation photoluminescence peak energy increased moderately with decreasing well thickness L and the PL lifetime did not strongly depend on L. The results clearly indicated that the piezoelectric field was not acting on the transition process. The TRPL signal was well fitted as a stretched exponential decay from 10 to 300 K, showing that the spontaneous emission is due to the radiative recombination of excitons localized in disordered quantum nanostructures such as In clusters. The localized states were considered to have two-dimensional density of states at 300 K (quantum disk size), since the radiative lifetime increased with increasing temperature above 150 K.© 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Neuroradiology 2 (1971), S. 122-124 
    ISSN: 1432-1920
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Description / Table of Contents: Résumé A propos d'un cas de rupture de l'artère cérébrale par traumatisme cranien. L'angiographie carotidienne montre une extravasation du produit de contraste du segment proximal de l'artère cérébrale moyenne droite.
    Abstract: Zusammenfassung Fallbeschreibung mit angiographisch nachgewiesenem Kontrastmittelaustritt aus den proximalen Abschnitten der Arteria cerebri media.
    Notes: Summary One case of a ruptured cerebral artery caused by head trauma is reported. The carotid angiogram showed extravasation of contrast medium from the proximal portion of the right middle cerebral artery.
    Type of Medium: Electronic Resource
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