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  • 1
    Electronic Resource
    Electronic Resource
    Laser operation-induced migration of beryllium at mirrors of GaAs/AlGaAs laser diodes (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1185-1187 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Laser operation-induced migration of beryllium at laser mirrors was studied by electron-beam-induced current. The devices investigated were single quantum well graded index separate confinement GaAs/AlGaAs ridge geometry laser diodes. In these devices, an operation-induced displacement of the p-n junction towards the n-type cladding has been observed close to the mirrors. A similar effect was induced by electron irradiation of the mirror facets in a scanning electron microscope. These effects have been attributed to recombination-enhanced diffusion/migration of beryllium from the p-type cladding. We have measured the diffusion coefficient of beryllium and, from this value, have estimated the average mirror temperature during laser operation. This temperature was found to be in excellent agreement with recently published measured mirror temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109765
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    High-power operation of strained InGaAs/AlGaAs single quantum well lasers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2642-2644 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The high-power integrity of strained single quantum well InGaAs/AlGaAs lasers grown by molecular beam epitaxy is investigated. In the high-power regime, the lifetime of the Lz=7 nm strained quantum well laser emitting at (approximately-equal-to) 980 nm is found to be limited by the air-cleaved facets. However, a comparison with lattice-matched 7 nm quantum well GaAs/AlGaAs lasers, which otherwise have an almost identical vertical structure shows a substantial lifetime improvement. This indicates that lattice hardening due to the indium in the quantum well is effective in the facet region. The investigations demonstrate the feasibility of 150 mW single mode operation with sufficient lifetime for practical applications in the wavelength range of (approximately-equal-to)1 μm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105924
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    SEM/EBIC characterization of degradation at mirrors of GaAs/AlGaAs laser diodes
    Amsterdam : Elsevier
    Microelectronic Engineering 24 (1994), S. 189-194 
    Details
    ISSN: 0167-9317
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0167-9317(94)90070-1
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    Paper (German National Licenses)
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