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  • 1
    Electronic Resource
    Electronic Resource
    Ultrasound stimulated dissociation of Fe-B pairs in silicon (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5458-5460 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We found that application of ultrasound vibrations to p-type silicon promotes a dissociation of iron-boron pairs. This effect is manifested by a decrease of the minority carrier diffusion length, L, after ultrasound treatment (UST) of the silicon wafer. Post-UST recovery of the diffusion length is identical after thermal and optical pair dissociation. This provides an unambiguous proof for dissociation of Fe-B pairs stimulated by ultrasound vibrations. The UST process creates interstitial iron donors which acts as efficient recombination centers and lower the L value. A relevant physical mechanism of the ultrasound effect is discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359243
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  • 2
    Electronic Resource
    Electronic Resource
    Scanning room-temperature photoluminescence in polycrystalline silicon (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1555-1557 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) mapping was performed on polycrystalline silicon wafers at room temperature. Two PL bands are observed: (1) a band-to-band emission with a maximum at 1.09 eV, and (2) a deep "defect" luminescence at about 0.8 eV. PL mapping of 10 cm×10 cm wafers revealed inhomogeneity of the band-to-band PL intensity which could be correlated to the distribution of minority carrier diffusion length in the wafer bulk. We have also observed that the intensity of the 0.8 eV band is strongest along those grain boundaries where the band-to-band PL is suppressed as well as minority carrier diffusion length. The origin of the 0.8 eV luminescence band is discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123614
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  • 3
    Electronic Resource
    Electronic Resource
    Increasing short minority carrier diffusion lengths in solar-grade polycrystalline silicon by ultrasound treatment (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1555-1557 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have found that ultrasound treatment (UST) has a profound effect on the recombination rate in as-grown, B-doped cast polycrystalline silicon wafers for photovoltaic applications. As determined by surface photovoltage measurements of the minority carrier diffusion length L, the UST increases the corresponding lifetime by almost an order of magnitude. The maximum enhancement takes place in the wafer regions with the shortest L values. For L(approximately-greater-than)20 μm, both positive and negative changes of L after UST are revealed at different wafer regions. The UST effect is temperature dependent and exhibits maximum influence at about 60 °C. Enhanced dissociation of Fe-B pairs by UST is identified as a mechanism which leads to a negative change of large L values, and a complex post-treatment relaxation. A positive change of L is attributed to the influence of ultrasound vibrations on crystallographic defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112942
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  • 4
    Electronic Resource
    Electronic Resource
    Enhancement of room-temperature photoluminescence in thin-film polycrystalline silicon produced by low power laser annealing (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2942-2944 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have found that seconds of 100 mW Ar laser exposure produces more than 100 times an increase in infrared photoluminescence (PL) intensity in thin-film polycrystalline silicon (poly-Si). The change of PL intensity on laser exposed film areas (minimum spot size of 20 μm) and the variation in film surface morphology measured by atomic force microscope are compared. The effect of PL enhancement strongly correlates to two distinctive processes: (a) the increase of a grain size due to poly-Si recrystallization, and (b) the oxygen incorporation into the film from glass or quartz substrates or/and from ambient gas. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114819
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  • 5
    Electronic Resource
    Electronic Resource
    Band-tail photoluminescence in polycrystalline silicon thin films (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 82-84 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have found a new photoluminescence (PL) band with a maximum at 0.9 eV and a halfwidth of 0.1 eV at 4.2 K in polycrystalline Si thin films deposited on glass at 625 °C. The PL band strongly shifts toward low energy with increasing the temperature (1.3 meV/K) and toward high energy with increasing the excitation intensity. Hydrogenation of polycrystalline Si enhances the PL intensity by factor of 3 to 5. The luminescence characteristics are consistent with radiative recombination of electrons and holes trapped in tail states of the conduction and the valence band, respectively. Excellent agreement is achieved between the 0.9 eV band shape and theoretical calculations based on a band-tail recombination. It is also argued that a corresponding luminescence spectroscopy provides a new possibility for band-tail diagnostics in polycrystalline Si thin films. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115515
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  • 6
    Electronic Resource
    Electronic Resource
    Activation of luminescence in polycrystalline silicon thin films by ultrasound treatment (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2537-2539 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A dramatic increase of infrared photoluminescence (PL) intensity by a factor of 2 orders of magnitude is observed after a few minutes at 250 °C of ultrasound treatment (UST) applied to polycrystalline silicon thin films on glass substrates. In films obtained by solid-phase crystallization of amorphous silicon at 550 °C, UST enhances the PL band intensity at 0.7 eV, and also activates a new luminescence maximum at about 0.9 eV. We prove that the 0.9 eV PL band is related to the amorphous fraction of poly-Si films. Due to similarities in spectral shape and temperature behavior, this UST activated luminescence is attributed to a "defect'' PL band previously observed in hydrogenated amorphous Si. This conclusion is confirmed by using a set of films with controlled fractions of the amorphous to crystalline phase. A mechanism of ultrasound stimulated hydrogen detrapping followed by hydrogen diffusion and passivation of nonradiative centers (e.g., dangling bonds) in polycrystalline and amorphous Si films is discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117731
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  • 7
    Electronic Resource
    Electronic Resource
    Enhanced hydrogenation in polycrystalline silicon thin films using low-temperature ultrasound treatment (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2873-2875 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrasound treatment (UST) was applied to improve electronic properties of polycrystalline silicon films on silica-based substrates. A strong decrease of sheet resistance by a factor of two orders of magnitude was observed in hydrogenated films at UST temperatures lower than 100 °C. This is accompanied by improvement of a film homogeneity as confirmed by spatially resolved photoluminescence study. The UST effect on sheet resistance demonstrates both stable and metastable behavior. A stable UST effect can be accomplished using consecutive cycles of UST and relaxation. An enhanced passivation of grain boundary defects after UST is directly measured by nanoscale contact potential difference with atomic force microscope. Two specific UST processes based on interaction between the ultrasound and atomic hydrogen are suggested: enhanced passivation of grain boundary defects and UST induced metastability of hydrogen related defects. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116353
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  • 8
    Electronic Resource
    Electronic Resource
    Nonlinear resonance ultrasonic vibrations in Czochralski-silicon wafers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2217-2219 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A resonance effect of generation of subharmonic acoustic vibrations is observed in as-grown, oxidized, and epitaxial silicon wafers. Ultrasonic vibrations were generated into a standard 200 mm Czochralski-silicon (Cz-Si) wafer using a circular ultrasound transducer with major frequency of the radial vibrations at about 26 kHz. By tuning frequency (f) of the transducer within a resonance curve, we observed a generation of intense f/2 subharmonic acoustic mode assigned as a "whistle." The whistle mode has a threshold amplitude behavior and narrow frequency band. The whistle is attributed to a nonlinear acoustic vibration of a silicon plate. It is demonstrated that characteristics of the whistle mode are sensitive to internal stress and can be used for quality control and in-line diagnostics of oxidized and epitaxial Cz-Si wafers. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126301
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  • 9
    Electronic Resource
    Electronic Resource
    Defect passivation using ultrasound treatment: fundamentals and application (1999)
    Springer
    Applied physics 69 (1999), S. 225-232 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 71.55.-i; 73.50.-h; 78.55.Ap
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. Ultrasonic vibrations introduced into semiconductor thin-films can trigger defect reactions, which are beneficial for electronic materials and devices. This type of semiconductor processing is assigned as ultrasound treatment (UST). The UST technology was initially developed in compound semiconductors and recently successfully applied to Si-based materials. The analysis of UST effects is performed within a general scenario of three-step point-defect gettering comprised of the (a) release, (b) diffusion, and (c) capture of the defects. As a demonstrating vehicle of UST mechanisms, the experimental data on ultrasonically enhanced diffusion of atomic hydrogen in thin polycrystalline Si films are discussed. UST applied to plasma-hydrogenated films improves the homogeneity of recombination and transport properties. Ultrasound promotes a passivation of grain boundary defects as revealed using scanning photoluminescence spectroscopy, contact potential difference with nano-scale resolution, and sheet resistance measurements. The results favor a model of trap-limited hydrogen diffusion facilitated by ultrasound. Illustrative examples of the UST application for electronic devices are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050994
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  • 10
    Electronic Resource
    Electronic Resource
    Decomposition of a complex spectrum into components with the aid of polarization modulation (1979)
    Springer
    Journal of applied spectroscopy 31 (1979), S. 1128-1132 
    Details
    ISSN: 1573-8647
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00611546
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