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  • 1
    Digitale Medien
    Digitale Medien
    Peritonitis following diagnostic laparoscopy due to injury to a vesicourachal diverticulum (1989)
    Oxford, UK : Blackwell Publishing Ltd
    BJOG 96 (1989), S. 0 
    Details
    ISSN: 1471-0528
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Medizin
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1111/j.1471-0528.1989.tb02399.x
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  • 2
    Digitale Medien
    Digitale Medien
    Fabrication of buried epitaxial CoSi2 layer through selective diffusion (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 607-609 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The incorporation of metallic layers into the bulk of semiconductors is gaining tremendous attention for device applications. This is mainly achieved by ion beam synthesis. In the ultrathin film regime, however, this technique is not practical due to the damage incurred. Here we report a technique by which fabrication of buried epitaxial CoSi2 is achieved by making use of the selective diffusion behavior of Co. Co atoms diffuse through a Ge overlayer on a Si(111) substrate and are terminated by reaction with the Si atoms underneath. Ion scattering as well as high resolution microscopy results confirm that the CoSi2 layer thus formed is in epitaxial form. This method would help in providing functionality to nanostructure based devices. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.118288
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  • 3
    Digitale Medien
    Digitale Medien
    Diffusion mediated chemical reaction in Co/Ge/Si(100) forming Ge/CoSi2/Si(100) (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1241-1243 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report the occurrence of a diffusion mediated chemical reaction in the layered structure Co/Ge/Si(100) to form Ge/CoSi2/Si(100). This is possible due to the lower onset temperature of inward diffusion of Co in Ge(100) (∼150 °C) compared to that in Si(100) (∼300 °C). Deposition of ∼2 monolayer (ML) of Co at room temperature, onto a Ge covered (∼3 ML) Si(100) surface, mainly forms CoxGey species on the surface. However, annealing the sample at 400 °C, Co diffuses through the Ge layer and reacts with Si and forms buried cobalt silicide of the structure Ge/CoSi2/Si(100). X-ray and ultraviolet photoelectron spectroscopy (XPS and UPS), medium energy ion scattering (MEIS) are employed for the study. The results open up a possibility to fabricate metal/semiconductor heterostructures in a novel way. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.115939
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  • 4
    Digitale Medien
    Digitale Medien
    Fabrication of multiperiod Si/SiO2/Ge layered structure through chemical bond manipulation (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3169-3171 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In this letter, we report a method called chemical bond manipulation for fabrication of multiperiod nanometer sized Si/SiO2/Ge layered structure. Chemical bond manipulation is a self-organization process which involves selective breaking and making of surface chemical bonds and thereby enable formation of the desired species on a full wafer scale. We show that oxygen of germanium oxide layer formed on Si(111) are picked up by the Si atoms arriving at the surface during subsequent growth. This phenomenon involves breaking of Ge–O bonds and making of Si–O bonds and leads to the formation of ultrathin Si and Ge layers sandwiched between ultrathin silicon oxide layers, preserving the original wafer morphology. This material exhibits blue-green light emission at room temperature when excited by ultraviolet laser. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.121582
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  • 5
    Digitale Medien
    Digitale Medien
    Nature of native oxide on GaN surface and its reaction with Al (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3212-3214 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In this letter, we describe the surface properties of GaN thin films grown on sapphire substrate by molecular beam epitaxy, as revealed by ultraviolet and x-ray photoelectron spectroscopic and Auger electron spectroscopic studies. The samples are seen to contain overlayer of native oxides, which are predominantly in the Ga2O3 form. Ammonia is shown to be a good etchant for these native oxides. Furthermore, we investigated the early stages of the reaction of monolayer Al with a GaN surface covered with native oxide. Aluminum reacts preferentially with the surface oxygen and leads to the formation of a mixture of oxides at the interface. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.117964
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  • 6
    Digitale Medien
    Digitale Medien
    Distinctly different thermal decomposition pathways of ultrathin oxide layer on Ge and Si surfaces (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2244-2246 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The thermal decomposition pathway of an ultrathin oxide layer on Ge(100) and Si(100) surfaces is examined by synchrotron radiation photoelectron spectroscopy and ultraviolet photoelectron spectroscopy with helium I radiation. The as-prepared oxide layer consists of a mixture of oxides, namely, suboxides and dioxides, on both the surfaces. Upon annealing, the oxide layers decompose and desorb as monoxides. However, we find that the decomposition pathways are different from each other. On annealing Ge oxides, GeO2 species transform to GeO and remain on the surface and desorb at 〉420 °C. In contrast, annealing of Si oxides results in the transformation of SiO to SiO2 up to temperatures (∼780 °C) close to the desorption. At higher temperatures, SiO2 decomposes and desorbs, implying a reverse transformation to volatile SiO species. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.126309
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  • 7
    Digitale Medien
    Digitale Medien
    Novel method for rejuvenating and fabricating stable Se/GaAs surfaces (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1807-1808 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Rejuvenation of the oxidized Se/GaAs surface has been realized by deposition of a thin Al layer. The results provided by synchrotron radiation photoelectron spectroscopy show that upon Al deposition, oxygen originally bound to Ga segregates to the surface and forms a more thermodynamically stable Al oxide species. In addition, a reduction in band bending is realized suggesting that this method may be useful as a means of fabricating a wide range of passivated overlayer/Se/GaAs interfaces.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.110669
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  • 8
    Digitale Medien
    Digitale Medien
    Misfit dislocation propagation kinetics in GexSi1−x/Ge(100) heterostructures (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 327-329 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report measurements of misfit dislocation propagation velocities in GexSi1−x epilayers grown upon Ge(100) substrates, as opposed to the more usual Si(100) substrates. This geometry allows us to study structures with high Ge concentration (x≥0.8), and to compare with previous extensive measurements for lower Ge concentration layers (x≤0.35) grown upon Si(100). It is found that all data are well described by a misfit dislocation velocity which is linear with excess stress, and which incorporates a compositionally dependent activation energy with linear interpolation between bulk values for Si and Ge. The combined data sets from structures grown on Si(100) and Ge(100) substrates is analyzed in the framework of the diffusive double kink model for dislocation motion.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.113023
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  • 9
    Digitale Medien
    Digitale Medien
    Bonding partner change reaction in oxidation of Ge on Si(001): Observation of two step formation of SiO2 (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1839-1841 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Oxidation of 5 A(ring) Ge deposited at room temperature on Si(001) and the dependence of temperature on the oxidation behavior are investigated by employing synchrotron radiation photoelectron spectroscopy. The sample on exposure to air forms a mixture of Ge oxides and a small amount of Si oxides. Upon annealing, oxygen changes its bonding partner from Ge to Si forming SiO2 as the predominant final product. Two distinct steps have been observed in such a reaction. First step is the cleavage of all the Ge—O bonds and formation of Si—O bonds to form mainly Si suboxide. The second step is the rearrangement of Si—O bonds to form SiO2. The former one takes place in the temperature range 200–300 °C whereas the latter one in the range 300–600 °C.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.111772
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  • 10
    Digitale Medien
    Digitale Medien
    In situ oxidation of a thin layer of Ge on Si(001): Observation of GeO to SiO2 transition (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 864-866 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A thin layer of Ge grown on Si(001) surface is oxidized in situ and investigated using XPS, AES, RHEED, and MEIS. The samples used are, Ge layer formed by deposition at room temperature and SiGe mixed layer formed by deposition at 550 °C. Oxidation at 250 °C of the RT grown layer leads to the formation of GeO and on heating the surface to 360 °C, oxygen bonds with Si forming SiO2, thereby reducing GeO to elemental Ge. In the epitaxially grown layer (grown at 550 °C), after oxidation, SiO2 and a small amount of GeO are formed. Similar reaction takes place on this surface also, forming SiO2 as the final product on the surface. In the RT grown layer, after oxidation, MEIS shows evidence for the diffusion of Si through the Ge layer towards the surface.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.108548
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