Library

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2107-2112 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article presents the light-induced effects on the electrical and optical properties of undoped- and doped-hydrogenated amorphous silicon films. The changes in the conductivities and the activation energies of various types of a-Si:H films due to the prolonged exposure to light have been characterized as a function of deposition conditions and illumination periods. We have also analyzed the variations of microstructure of a-Si:H film such as silicon–hydrogen bondings in the rocking and stretching modes utilizing infrared spectroscopy. From the experimental results, it is clear that doping effects must be crucial to the degradations of the fundamental properties of a-Si:H due to light-induced effects.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4456-4458 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This communication reports experimental results concerning the effects of the operating temperature on the optical properties of doped and undoped hydrogenated amorphous silicon films prepared by rf glow discharge. Optical-absorption coefficients of those films increased by about 10%–18% and their optical band gaps decreased linearly by about 4–8×10−4 eV/K with increasing temperature from about 20 to 100 °C.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 306-308 (Mar. 2006), p. 1325-1330 
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The multi-pass welding generates residual stress which may change fatigue crack growth rate and impair the lifetime of nuclear welded structures. In this paper, we performed fatigue test with notched specimens and evaluate the effect of residual stress on fatigue crack growth rate of welds. In order to identify the magnitude of residual stress, the residual stress was measured by HDM (hole drilling method) and residual stress analysis was performed by using FEM (finiteelement method). In order to review the effect of residual stress on fatigue crack growth rate, the fatigue crack growth analysis was also performed to determine the fatigue crack growth curves by using FEM and ASME B&PV Code, Sec.XI, App.A. Finally, as a result of comparison among the fatigue crack growth curves, it is found that the fatigue crack growth rate was quite different according to the crack location even if the residual stresses are considered
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...