ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
Tin doped indium oxide (ITO) films were deposited on plastic films by RF superimposedDC magnetron sputtering method using an In2O3 – 10 wt.% SnO2 target without intentionally heatingsubstrates. We have investigated the effects of an RF superimposed DC power system on theelectrical, optical, and mechanical properties of the ITO films by using Four-Point Probe, Hall EffectMeasurement, UV-Vis-NIR Spectrophotometer, XRD, and Residual Stress Measurement. Withincreasing the amount of RF power superimposed on DC power, the sputtering discharge voltages ofDC power supply were decreased from –290 V to –100 V, i.e., plasma impedance decreased with anincrease of the amount of RF power. The resistivity of the samples drastically decreases withincreasing RF power, and shows the lowest value of 3.8×10-4 8·cm. Hall effect measurements explainthat the increase of carrier mobility is strongly related with the enhancement of the resistivity of ITOfilms even though there is no difference on its concentration. The RF power superimposed on DCpower also reduces the residual stress of the samples up to the stress level of ~ 200 MPa at optimumvalues of RF power
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/23/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.124-126.367.pdf
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