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  • 1
    Electronic Resource
    Electronic Resource
    Synthesis of diamond films on titanium substrates by hot-filament chemical vapor deposition (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2618-2622 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Synthetic diamond film has been deposited on a polycrystalline titanium substrate using a hot-filament chemical vapor deposition method in order to study the role of substrate pretreatment and carbide formation for the diamond nucleation and subsequent growth. The substrate pretreatment, roughening by diamond powder, affects both nucleation behavior and subsequent growth of diamond. The TiC is formed on the Ti substrate during deposition. It is observed that scratches which existed on the initial Ti surface disappear after the TiC has formed; this TiC has a rough and porous structure. The TiC layer formed in this experimental condition does not influence the nucleation behavior. The nucleation behavior depends entirely on the initial surface condition of the Ti substrate, i.e., whether or not it was scratched with the diamond powder. It is suggested that changes in the surface nature due to the scratching process can create the new nucleation sites which have strong binding energies and that the formation of these new sites can alter the nucleation behavior.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348653
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    The morphology changes in diamond synthesized by hot-filament chemical vapor deposition (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3354-3357 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hot-filament-assisted chemical vapor deposition has been used to study the growth morphology of synthetic diamond deposited on silicon substrate in a dilute (1 vol %) CH3COCH3/H2 at high substrate temperature (about 777 °C). Scanning electron microscope pictures of the diamond particles show that the surfaces of synthetic diamond consist of rough-octahedral (111) faces and smooth-cubic (100) faces, which is cubo-octahedron. And also the (110) facets on the octahedral face are observed. The relative growth rate of (111) faces to that of (100) faces in the cubo-octahedron is double that derived from the calculated specific surface energy. So the apparent growth rate of the octahedral face must be explained by the growths of two constituent crystallographic planes of (100) and (110). The observed roughness of (111) faces arises from the competing growths of (100) and (110) planes. The (110) faces separate the (111) faces into three (110) planes. For the study of diamond crystal growth during deposition, it is suggested that the growth mechanism of cubo-octahedral diamond is the competing growths of (100) and (110) crystallographic planes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345373
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Nucleation behaviour of diamond particles on silicon substrates in a hot-filament chemical vapour deposition (1993)
    Springer
    Journal of materials science 28 (1993), S. 1799-1804 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Diamond films and particles have been deposited on a silicon substrate using a hot-filament chemical vapour deposition (CVD) method in order to study the effect of hydrogen on the behaviour of diamond nucleation. The nucleation density of diamond was affected by both hydrogen treatment prior to deposition and filament temperature,T f. The nucleation density was decreased markedly with increasing hydrogen-treatment time. The nucleation density also changed with increasingT f, which increased initially and then reached a maximum at 2100°C and decreased thereafter. Etching of the substrate surface was observed and enhanced with both increasing hydrogen-treatment time and increasingT f. The changes in nucleation behaviour were related closely to the etching of substrate surface. These results are explained in terms of the etching of nucleation sites.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00595748
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    Paper (German National Licenses)
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