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  • 1
    Electronic Resource
    Electronic Resource
    Thin Films of Granular Silicon: Electrical, Structural and Optical Characterization (1997)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 54 (Aug. 1997), p. 109-118 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/25/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.54.109.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Red- and blue-light emission from free-standing porous silicon (1996)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 18 (1996), S. 1149-1157 
    Details
    ISSN: 0392-6737
    Keywords: Optoelectronic devices ; Other solid inorganic materials ; Time-resolved optical spectroscopies and other ultrafast optical measurements in condensed matter ; Interfaces ; heterostructures ; nanostructures ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary We report the observation of strong red- and blue-light emission in free-standing porous-silicon samples prepared fromn + substrates at different anodization current densities. The surface morphology of the free-standing samples has been analyzed by means of atomic-force microscopy. Upon excitation with nanosecond pulses at room temperature, both blue and red luminescence bands appear, peaked around 3.2 and 2.0 eV, respectively. An extensive study of the time-resolved behavior of the photoluminescence signal reveals different dynamical features for the two spectral regions. The observed long decay time (several μs) of the red band reflects the predominant effect of non-radiative processes and is consistent with models based on excition diffusion through the interconnected silicon nanocrystals (quantum dots) skeleton. The relatively fast blue-band decay time (≈400 ns) is shown to be related to non-radiative recombination through trap states at the silicon nanocrystal surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02464692
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  • 3
    Electronic Resource
    Electronic Resource
    Current-voltage characteristics of porous-silicon structures (1996)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 18 (1996), S. 1197-1204 
    Details
    ISSN: 0392-6737
    Keywords: Optoelectronic devices ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary I–V DC characteristics have been measured on metal/ porous-silicon structures. In particular, the measurements on metal/ free-standing porous-silicon film/metal devices confirmed the result, already obtained, that the metal/poroussilicon interface plays a crucial role in the transport of any device. Four-contacts measurements on free-standing layers showed that the current linearly depends on the voltage and that the conduction process is thermally activated, the activtion energy depending on the porous silicon film production parameters. Finally, annealing experiments performed in order to improve the conduction of rectifiyng contacts, are described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02464697
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  • 4
    Electronic Resource
    Electronic Resource
    Current transport in free-standing porous silicon (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 687-689 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical conduction of free-standing porous silicon layers, obtained from n+ silicon with various anodization currents and illumination conditions, has been investigated in vacuum as a function of the temperature in the interval 300-210 K. The two-contact I-V characteristic is determined by the metal/porous silicon rectifying interface, whereas, by using the four-contact technique, a linear dependence of the current vs voltage was found. The resistance of free-standing samples showed a thermally activated behavior, with activation energies ranging from 0.1 to 0.44 eV. It was found that the activation energy decreased if the light intensity during the anodization was reduced. Variations of activation energy were also observed if the anodization current was changed but, in this case, it was not possible to find any correlation over the parameter range investigated. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116592
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