ISSN:
1662-0356
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Natural Sciences in General
,
Technology
Notes:
The possibility to use semiconducting or metallic nanocrystals (ncs) embedded in aSiO2 matrix as charge storage elements in novel non volatile memory devices has been widelyexplored in the last ten years. The replacement of the continuous polysilicon layer of aconventional flash memory device by a 2-dimensional nanoparticle array presents severaladvantages but the fundamental trade-off between programming and data retention characteristicshas not been overcome yet. The main problem is the limited retention time basically due to chargeloss by leakage current through the ultra-thin SiO2 tunnelling dielectric. A longer retention timecan be achieved by increasing the tunnel oxide thickness. This however implies higher operatingvoltages and consequently a reduced write/erase speed. Using high-k materials for tunnel and/orgate oxide it is in principle possible to achieve the goal of a low voltage non volatile memorydevice. The high dielectric constant of these materials allows using thicker tunnel oxide reducingleakage current. Several approaches have been explored to synthesise ordered arrays of ncs inSiO2 but the transfer of these methodologies to the synthesis of 2-d array of ncs in high-k materialsis not trivial. In this work we address the material science issues related to the synthesis ofmetallic and semiconducting ncs in high-k materials using different techniques. A detailed reviewof the state of the art in the field is presented and further research strategies are suggested
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/42/transtech_doi~10.4028%252Fwww.scientific.net%252FAST.51.156.pdf
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