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  • 1
    ISSN: 1432-1017
    Keywords: Key wordsEntamoeba histolytica ; Linear and circular DNA ; Migration velocities ; Reorientation time ; Pulsed field
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Physics
    Notes: Abstract Entamoeba histolytica genome was analysed by pulsed field gel electrophoresis under conditions to separate linear chromosomes in the 170–1400 kb range. We identified linear DNA molecules of 227, 366, 631, 850, 1112 and 1361 kb (mean sizes obtained by three different methods) and we estimated their reorientation times and migration velocities at various experimental conditions. DNA shift mobility assays, using ethidium bromide, suggested that bands migrating at 227 and 631 kb contain linear and circular DNA, whereas a band at 436 kb has only circular DNA. We obtained a regression equation relating sizes of supercoiled DNA molecules with their migration velocities during a pulse at constant electric field and temperature. We also developed a computer program (EHPATTERNS) that predicts the migration per pulse and the resolution order of circular and linear E. histolytica DNA at different pulse times and constant driving and frictional forces. The simulation showed that linear DNA molecules frequently co-migrate with circular molecules, but circular molecules change when the pulse time varies. This molecular mixture generates broad bands and difficulties in the interpretation of the molecular karyotype of E. histolytica.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Advances in science and technology Vol. 51 (Oct. 2006), p. 140-144 
    ISSN: 1662-0356
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Natural Sciences in General , Technology
    Notes: Experimental results indicate that conformational changes of organic molecules occurring in thegaseous and in the liquid phase are hindered or lowered in constrained environments like zeolitepores. A successful understanding of the processes occurring in this type of materials requires agood description of the equilibrium properties, which can be calculated by the Grand CanonicalMonte Carlo method. In particular, in the present work conformational changes, such as boat →chair for cyclohexane, are studied by molecular dynamics simulation, as a function of pore size andtemperature
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 2 (1983), S. 1895-1899 
    ISSN: 0392-6737
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Lo spettro di assorbimento vicino al bordo di assorbimento fondamentale di un cristallo singolo di tipon di CuInSe2, cresciuto col metodo di Bridgman, è stato studiato a 100 e 300 K. Si osserva un bordo di assorbimento in corrispondenza della transizione del gap di banda diretta a circa 1 eV. Un ulteriore assorbimento è osservato a energie inferiori ((0.93÷0.95) eV) ed è attribuito a transizioni dirette alla presenza di fononi ottici a grande lunghezza d'onda.
    Abstract: Резюме При 100 К и 300 К исследуется спектр поглощения вблизи основного края поглощения монокристалла CuInSe2 n-типа, выращенного по методу Ъридгмана, Вблизи 1 эВ обнаружен край поглощения, соответствующий прямому переходу. Дополнительное поглощение наблюдается при меньших энергиях ((0.93÷0.95) эВ) и приписывается прямым переходом, связанным с длинноволновыми оптическими фононами.
    Notes: Summary The absorption spectrum near the fundamental absorption edge of an-type CuInSe2 single crystal grown by the Bridgman method has been studied at 100 and 300 K. An absorption edge corresponding to the direct-band-gap transition is observed at about 1 eV. An additional absorption is observed at lower energies ((0.93÷0.95) eV) and is attributed to direct transitions assisted by long-wave-length optical phonons.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    International Journal of Radiation Applications & Instrumentation. Part 40 (1989), S. 365-367 
    ISSN: 0883-2889
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Energy, Environment Protection, Nuclear Power Engineering
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Progress In Crystal Growth And Characterization 10 (1984), S. 307-310 
    ISSN: 0146-3535
    Keywords: ''Burstein shift'', defect chemistry ; CuInSe"2 ; Optical properties ; copper diffusion ; critical electron concentration ; fundamental absorption edge ; optical energy gap
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Geosciences , Physics
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Prostaglandins 2 (1972), S. 393-398 
    ISSN: 0090-6980
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Medicine
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 84 (1980), S. 1306-1309 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 822-828 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Hall effect and electrical resistivity measurements on p-type Cu2GeSe3 crystals were measured in the temperature range from 80 to 300 K. The temperature variation of the hole concentration p from about 200 to 300 K is explained as due to the thermal activation of a shallow acceptor level with an ionization energy of around 50 meV. At low temperatures the impurity band conduction dominates the electrical transport processes. From the analysis of the p vs T data, the density-of-states hole effective mass is estimated to be of the same magnitude as the free electron mass. The temperature variation of the hole mobility in the valence band is analyzed by taking into account the scattering of charge carriers by ionized impurities and acoustic phonons. In the impurity band, the mobility is explained as due to thermally activated hopping transport. The optical absorption coefficient spectrum shows the presence of three absorption narrow bands below the fundamental gap. From the analysis of their temperature dependence, these bands are attributed as due to free–to–bound transitions related to intrinsic defect acceptor states. Activation energies of these states are estimated to be around 0.12, 0.24, and 0.30 eV. Tentative assignment of the nature and origin of these defect states were also made. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4423-4428 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties of the ordered defect compound CuIn5Se8, which crystallizes in a hexagonal structure, have been studied by the absorption technique. The analysis of the data shows that the band gap energy EG varies from 1.23 to 1.13 eV between 10 and 300 K. It is found that the variation of EG with temperature is due to the contribution of both acoustic and optical phonons with a characteristic phonon energy of about 14 meV. The optical absorption coefficient just below the absorption edge varies exponentially with photon energy indicating the presence of Urbach's tail. The phonon energy hνp associated with Urbach's tail, which is found to be 53 meV, is higher than the highest optical phonon mode reported for this compound, which is about 29 meV. The origin of the additional energy is attributed to the contribution of localized modes produced by structural disorder of low energy formation. An empirical relation, also used earlier in the case of 1:1:2 and other ordered defect compounds of the 1:3:5 phases, explains very well the variation of Urbach's energy with temperature. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 3364-3366 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: From the study of the temperature dependence of the optical absorption spectra, the energy gap EG of CuIn3Se5 between 10 and 300 K are calculated using the model proposed by Elliot. This variation is compared to the semiempirical relation suggested by Manoogian–Woolley. The Debye temperature aitch-thetaD, the dielectric constant ε0, and the effective masses of free excitons mex, electrons me, and holes mh are estimated from the analysis of the adjustable parameters of these models. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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