ISSN:
0948-1907
Keywords:
Copper
;
Precursor
;
Pyrazolyborate
;
MOCVD
;
Chemistry
;
Polymer and Materials Science
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Chemistry and Pharmacology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
CuCl reacts with Na[HB(R3R5pz)3] and phosphine (PR3) or isonitrile (CNR) to yield volatile (pyrazolylborate)copper(I) complexes. These compounds were evaluated as MOCVD precursors. Using [{HB(pz)3}Cu(PEt3)] and [{HB(pz)3}Cu(PMe3)], thin copper films were grown by thermal metal organic chemical vapor deposition in a low pressure reactor in the temperature range 150-350°C. Polycrystalline Cu-phases were obtained at temperatures as low as 150°C. The metallic films were characterized by four-point-probe resistivity measurements, AES, and XPS, as well as AFM and SEM. Selective deposition on metal-seeded surface sites was observed on Pt, Au, Al, and W versus SiO2. Anti-selective deposition was found to occur on Pd-seeded samples.
Additional Material:
7 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/cvde.19970030106
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