Library

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multilayered garnet heterostructures of Y3Fe5O12 (YIG) and Eu1Bi2Fe5O12 (EBIG) have been deposited on single crystalline [111] oriented Gd3Ga5O12 (GGG) substrates, pulsed laser deposition (PLD). Magnetic (vibrating sample magnetometer) and magneto-optical (reflective Faraday effect) measurements have indicated out-of-plane magnetization for all YIG/EBIG films, coercivities up to 1.2 kOe, and Faraday rotations as high as 50 000 deg/cm. According to x-ray diffraction experiments, all films are single crystalline, [111] oriented. Initial high resolution transmission electron microscopy studies have shown epitaxial growth of both YIG and EBIG layers. All samples had YIG deposited as the first layer of the heterostructure because of its small lattice mismatch with the substrate. As a consequence, all films showed sharp interfaces between the substrate and the first YIG layer. At the second interface, between the YIG layer and the first EBIG layer, structural defects were noted to form in the EBIG film. The thickness ratios between YIG and EBIG layers were intentionally changed during the processing to study the effect on magneto-optical properties. Transmission electron microscopy characterization indicated changes in the interface morphology, with some films displaying high coherence and sharpness of the interfaces, while others showed wavy and very incoherent interfaces. The films with sharp interfaces showed the highest values of Faraday rotation. Since there were no processing parameter changes from one film to another, the results appear to indicate that the morphology of the interfaces is the result of thickness variations in the heterostructures. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 477-483 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In part I, the concept of a temperature dependent domain stability map was developed for tetragonal ferroelectrics grown on cubic substrates. In this paper, a range of experimental data on domain populations in heteroepitaxial ferroelectric films is placed in the context of the stability map. Experimental data shows that differential thermal expansion, cooling rate, and applied electric fields may be effectively used to control domain structure, particularly in the system PZT, PZT/YBCO/LaAlO3, and LSCO/PLZT/LSCO/LaAlO3. It will be shown that misfit dislocations generated during growth screen the majority of the lattice mismatch with the substrate. Thus, the variety of domain patterns that develop during the Curie transition depend on processing parameters and can be successfully explained by applying the temperature dependent coherent domain stability map developed in part I.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 3
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using the phenomenon of ferromagnetic antiresonance (FMAR) in ceramic samples of La0.67Ba0.33MnO3 at 10 GHz, we report a large magneto-impedance MI=Rs(H(parallel))−Rs(H⊥)]/Rs(H(parallel)), where Rs is the microwave surface resistance and H the applied field. The MI reaches 30% at a field of 30 mT near room temperature. The FMAR also lets us measure M(T) by following Rs as a function of T and H. ©1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 5773-5773 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial thin films of La0.7Sr0.3MnO3 have been grown by pulsed laser deposition1 onto Si substrates that were buffered with Bi4Ti3O12 and yttrium-stabilized zirconia. They appear to have excellent structural properties as seen by x-ray diffraction and Rutherford backscattering. We will report spin wave resonance (SWR) and electron paramagnetic resonance (EPR) experiments at 10 GHz for 280〈T〈370 K. We observe drastic changes in the spectra consequent upon small variations in temperature: (i) At 295 K, the linewidth of the first spin wave mode is only 15 Oe (the narrowest ever observed in a manganite), and the field positions Hn of the SWR follow the simple n2 dependence expected of a uniform film, n being the mode number.2 (ii) Below 280 K, the SWR spectra developed other structures, and the resonance positoins do not follow any simple model. (iii) When T is raised to about 300 K, Hn assumes a linear dependence on n, suggesting that the film magnetization has developed a parabolic spatial variation. (iv) Near 350 K, the linewidth effectively diverges. (v) At 370 K, an EPR line with a width of only 170 Oe appears. As shown previously,3 a peak in the linewidth near the Curie temperature TC can arise from a distribution of TC values. However, in the present film, the line essentially loses it integrity near TC as if the magnetic network were splitting into several substructures. The recovery in the paramagnetic state, one can imagine, happens because the magnetic phase is liquidlike and, thereby, homogeneous. The present observations dramatically demonstrate that to produce thin films of manganites that have desirable properties over a wide T interval, it is essential to ensure a lattice match that is not upset by T variation. ©1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 5
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of an electric field on GMR oxide films was studied in a MOSFET configuration where the gate dielectric was a layer of SrTiO3 epitaxially grown on an underlying layer of the manganate which served as the source/drain. The response of the manganate channel was studied for different gate voltages. The following significant features were observed. The peak resistance temperature shifted to lower temperature for both polarities of the field. The resistance change varied quadratically with the field indicating the dominance of strain or polarization effects. In dynamical studies of the system using the gate voltage as an excitation the system showed anomalous slowing down near the peak of the resistivity. These results are understood on the basis of a stress effect on the film due to electro-elastic effects in the SrTiO3 layer, which introduces a tensile stress in the manganate layer upon the application of a gate voltage. The anomalous slowing down of the system near the ferromagnetic phase transition suggests a strong coupling between the spins, transport and structural distortions in the system. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 6
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetoresistivity values of the order of 106% (and in some cases even higher) have been obtained in epitaxial AxB1−xMnO3−y (A=La,Nd; B=Ca,Sr,Ba) thin films grown by pulsed laser deposition. Ferromagnetic resonance experiments suggest a granular-type behavior with conducting ferromagnetic regions (Rcond〈10 mΩ cm) in a less conducting matrix (Rinsulazting(approximately-greater-than)100.Rcond). Ion channeling experiments over a range of temperatures clearly reveal the existence of structural distortion at the peak resistivity temperature TP. Systematic studies of samples prepared under a variety of oxygenation conditions show that the resistivity above TP can be modeled with a single functional form: Rcond≈eΔ/kT, where Δ, the activation energy, is of the order of 50–200 meV. This suggests that these different samples represent the same basic material in a semiconducting matrix, with differing volume fractions of the two components which depends on the processing conditions. These "colossal'' values of MR have been obtained at temperatures lower than room temperature and at fields of the order of a few Teslas, both of which are impediments to the development of viable MR sensor and nonvolatile storage technologies.We are therefore addressing the critical scientific and technological issues through a variety of materials integration approaches. Using structural chemistry and lattice matching as fundamental guiding principles, we are growing epitaxial heterostructure superlattices consisting of the CMR oxides interleaved with magnetic perovskites such as La–Sr–Co–O (metallic ferromagnet), rare earth–Fe–O (ferromagnetic insulator). We are also exploring the possibility of using the semiconducting properties of these materials in an all-perovskite field effect transistor device. In this presentation, we will describe our progress to date on these studies to enhance the field and temperature dependence of the MR properties and explore new device architectures that utilize the inherently novel properties of these materials. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 7
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have compared a single layer of La0.7Ba0.3MnO3 and a trilayer structure of SrTiO3/La0.7Ba0.3MnO3/SrTiO3, both grown epitaxially on a LaAlO3 substrate, using information obtained by ferromagnetic resonance (FMR). The trilayer samples have a more uniform magnetization and are not susceptible to environmental degradation. This may be due to the strain relief that the buffer SrTiO3 layer provides for the La0.7Ba0.3MnO3 layer. We have also studied the magnetic homogeneity of the trilayer structure as a function of the deposition temperature. The perpendicular FMR linewidth, Γ⊥, shows a clear window in the deposition temperature where the linewidth is 〈50 Oe. However, the parallel linewidth, Γ(parallel), is nearly ten times larger than Γ⊥ with only a weak dependence on the deposition temperature. This broadening of the parallel linewidth compared to the perpendicular linewidth can be explained by invoking a local unidirectional anisotropy in the plane of the film. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3556-3561 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical resistivity studies have been carried out on the C 15-type Laves phase intermetallic compounds Zr1−xHoxCo2 (0≤x≤1) and their hydrides in the temperature range 16–300 K. The first-order magnetic transition occurring for x=1 disappears for lower Ho concentrations. Anomalies in the form of resistivity minima observed for the intermediate x values are attributed to the spin fluctuations in the vicinity of the magnetic ordering temperature. On hydrogen absorption, the first-order transition observed for x=1.0 as well as the anomalies observed for the other x values disappear at higher hydrogen concentrations. A concentration-dependent metal-semiconductor-like transition has been observed in all cases. This may be a consequence of charge transfer taking place between hydrogen and the 3d band, which leads to a strong decrease in the conduction electron density. The activation energy is evaluated from the ln ρ vs 1/T plots.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6915-6917 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Giant magnetoresistance in a spinodally decomposed, bulk 60 Cu-20 Ni-20 Fe alloy is reported. An annealed, quenched, and heat-treated sample with a compositional modulation of (approximately-less-than)50 A(ring) size exhibits a ΔR/R value as high as 9% at 4.2 K. Optimization of the ferromagnetic phase particle geometry through a combination of spinodal decomposition and uniaxial deformation led to a locally multilayered, superlattice-like structure and a dramatic increase in room-temperature magnetoresistance from ∼0.6 to ∼5%. This improvement in magnetoresistance is accompanied by a decrease in coercivity from ∼620 Oe in the fully decomposed material to ∼45 Oe in the optimized structure. Interestingly, this structure no longer exhibits the commonly observed temperature-dependent behavior of ΔR/R increasing at low temperatures, but rather shows a decrease at 4.2 K.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 10
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the growth and magnetic characterization of epitaxial garnet thin films and heterostructures by pulsed laser deposition. Thin films and heterostructures consisting of yttrium iron garnet (YIG) interleaved with rare earth substituted bismuth iron garnet (BIG) have been deposited on single-crystal GGG substrates. These heterostructures exhibit strong polar magneto-optic Kerr effects with rotation angles of better than 5×104 °/cm at 533 nm. Microwave measurements at 10 GHz suggest that the Eu-substituted BIG layer has a preferred out-of-plane magnetization while the YIG layer is still magnetized in-plane. The implications of the magneto-optic and microwave results will be discussed in light of the heterostructure periodicity and film microstructure. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...