ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
The main goal of this work is to demonstrate the correlation between the density and typeof surface defects arising during the formation of a buried nitrogen-containing layer in Si wafers,and the number of buried defects formed by different dose hydrogen preimplantation.Standard commercial 12 [removed info]⋅cm boron-doped and 4.5 [removed info]⋅cm phosphorous-doped Cz Si waferswere subjected to hydrogen ion implantation at room temperature with the energy 100 keV anddoses 1⋅1015 - 4⋅1016 at/cm2. Then nitrogen was introduced into silicon from a DC plasma source ata temperature of 300 oС. Finally, all samples were subjected to 2 h vacuum annealing at 900 oС.The experiments have shown that the density and type of the surface defects dependsignificantly on the dose of hydrogen implantation, parameters of N+-plasma treatment, andconductivity type of silicon. Optimization of the above-mentioned parameters makes it possible tocreate the substrates containing a buried dielectric SixNy layer and having a practically defect-freesurface
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.131-133.195.pdf
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