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  • 1
    Electronic Resource
    Electronic Resource
    Apparatus for temperature programmed desorption studies of thin films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 320-321 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A versatile analytical system based on thermal desorption spectroscopy of thin films is presented. We have found the apparatus to be a useful tool for measuring the desorption characteristics of trapped gases in physical vapor deposited thin films and in determining the thermal stability of multi-component thin film compounds and multilayer structures. The system was also found to be a convenient tool for determining outgassing properties of thin film and thick film materials for vacuum microelectronic device applications. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150201
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  • 2
    Electronic Resource
    Electronic Resource
    Field emission characteristics of iridium oxide tips (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 6141-6146 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An important issue in field emission vacuum microelectronics is the stability of the field emitters with the residual ambient gas. Particularly important is that the field emitter tips made of refractory metals like molybdenum, niobium and tungsten are susceptible to oxidation. The corresponding metal oxides are insulating and adversely affect the emission current characteristic by increasing the width of the effective tunneling barrier. With this perspective, we studied iridium oxide field emitters to evaluate the characteristics of conductive oxide tips. We studied the field emission characteristics of iridium and thermally prepared iridium oxide field emitters using field emission microscopy and current–voltage measurements. We found that, upon oxidation, the voltage required to achieve the desired emission current desire dropped significantly. In addition, oxidation led to a decrease of emission current fluctuations. The development of stable conductive oxide field emitters should improve the performance of field emitter tips, especially under adverse vacuum conditions. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1467959
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  • 3
    Electronic Resource
    Electronic Resource
    Development of thin-film metal hydrides for integration into field emission displays (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2967-2969 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the development of solid-state hydrogen sources utilizing thin-film metal hydrides. We demonstrate that integration of these metal hydride thin films facilitate a practical method to introduce controlled amounts of hydrogen into sealed field emission display assemblies. To prove the concept, we operated Mo field emitter arrays without emission current loss for 400 h of continuous operation with titanium-hydride-coated stainless steel anode plates. Comparable arrays operated in the absence of hydride films, but in ultrahigh vacuum, had emission current degradation of over 50% in less than 100 h of operation. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1371241
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  • 4
    Electronic Resource
    Electronic Resource
    Growth and control of nanoprotrusions on iridium field emitters (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2375-2377 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the direct observation of the growth of nanoprotrusions on iridium field-emission tips. For clean, protrusion-free field emitters, the field emission originated from crystal planes with low-work-function values. However, with continuous operation, we observed the growth of nanoprotrusions on crystalline planes where there was initially no detectable emission. The protrusions were estimated to be approximately 2–3 nm in diameter and 5–15 nm in height. Protrusion growth led to an increase in field-emission current by several orders of magnitude. However, the tips were destroyed when operated with sustained emission current values greater than 10 μA. We found that stable operation and control of protrusion growth can be achieved by either progressively reducing the anode voltage or by adding a series resistor. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1364662
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  • 5
    Electronic Resource
    Electronic Resource
    Real-time measurement of pressure inside field-emission displays (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2648-2650 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a method for nondestructive, real-time measurement of pressure inside sealed flat-panel field-emission displays. Analogous to an ion gauge, field-emitted electrons were used to ionize residual gases within the interelectrode region and the resulting ion current was measured. The procedure was calibrated in a vacuum chamber with known gas pressure. Next, we demonstrated the pressure measurement method inside sealed field-emission displays outfitted with spinning rotor gauge attachments for comparison. We found good correlation between the spinning rotor gauge measurement and the pressure measured by our method. In addition, we observed that the operation of the field-emission display resulted in a rapid drop in pressure similar to ion pumping effects observed in other vacuum electron tubes. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1412280
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of growth conditions on surface morphology and photoelectric work function characteristics of iridium oxide thin films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1394-1396 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of thermal growth conditions on the morphology and surface work function of iridium oxide thin films grown by annealing Ir thin films in an O2 ambient is presented. The samples were analyzed using x-ray diffraction, x-ray photoelectron spectroscopy, atomic force microscopy, and photoelectric work function measurements. It is found that, with increasing temperature, IrO2 changes from (110) oriented to a mixture of (110) and (200) during the oxide growth. This is manifested as a sharpening of the photoelectric energy distributions at 800 °C. The surface work function was determined to be 4.23 eV using ultraviolet photoelectron spectroscopy. X-ray photoelectron spectroscopy analysis shows that IrO2 starts to form at 600 °C accompanied by surface roughening. Annealing the Ir film at 900 °C in O2 ambient leads to almost complete desorption of the film. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123561
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  • 7
    Electronic Resource
    Electronic Resource
    Argon inclusion in sputtered films and the effect of the gas on molybdenum field emitter arrays (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2151-2153 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Residual gas analysis of a number of field emission displays showed that argon desorbed from molybdenum metal lines was the dominant gas in sealed vacuum packages. We present experimental results on the emission characteristics of molybdenum field emitter arrays in argon ambient. In argon, the emission current dropped rapidly similar to that in oxygenic gas ambients. Existing degradation models do not provide an adequate explanation for this behavior. Rather, we suggest a model based on shallow implantation of argon into the field emitter tips that increases the effective width of the tunneling barrier. Experimental support for this model comes from the following observations: emission current degraded only when the device was turned on; after gas exposure, significant current recovery which followed diffusion type behavior was noted; degradation and recovery rates were functions of partial pressure; and no detectable effects associated with sputtering were observed. This mechanism is also consistent with ion pumping known to occur in field emission displays. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1361281
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  • 8
    Electronic Resource
    Electronic Resource
    Fabrication of iridium field emitter arrays (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3284-3286 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Iridium field emitter arrays were fabricated using Spindt tip process. Ir field emitter cones show an aspect ratio of 0.95, slightly less than Mo field emitter arrays fabricated using the same microfabrication process. When compared to the Mo field emitter arrays, the current–voltage characteristics of the Ir arrays were found to scale with the work function difference between Ir and Mo. Under ultrahigh vacuum conditions, the emission current stability of the Ir arrays measured over 180 h was found to be similar or slightly better than the emission stability of Mo arrays. However, when operated in the presence of O2, Ir field emitter arrays proved to be more robust and showed improved emission current stability versus their Mo counterparts. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1326043
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  • 9
    Electronic Resource
    Electronic Resource
    Synthetic methods. VIII. Hydroxylation of carbonyl compounds via silyl enol ethers (1975)
    s.l. : American Chemical Society
    The @journal of organic chemistry 40 (1975), S. 3427-3429 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo00911a027
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  • 10
    Electronic Resource
    Electronic Resource
    Synthetic methods. IV. Halogenation of carbonyl compounds via silyl enol ethers (1974)
    s.l. : American Chemical Society
    The @journal of organic chemistry 39 (1974), S. 1785-1787 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo00925a051
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