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  • 1
    Electronic Resource
    Electronic Resource
    Variability of morphological features in early infantile polyneuropathy with defective myelination (1987)
    Springer
    Acta neuropathologica 73 (1987), S. 295-300 
    Details
    ISSN: 1432-0533
    Keywords: Axon ; Myelin ; Infantile polyneuropathy ; Peripheral nerve ; Schwann cell
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary Four cases of early infantile polyneuropathy with defective myelination are reported. The peripheral nerve was studied by light and electron microscopy; different morphological characteristics have been noticed in these patients. Case 1 presented aspects of defective myelination with atypical “onion bulb” formation composed of multiple layers of basement membrane. In case 2, defective myelination and atypical “onion bulb” formation were associated with aberrant hypermyelination. Cases 3 and 4 were brothers, who presented axonal damage and atypical “onion bulb” formation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00686625
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  • 2
    Electronic Resource
    Electronic Resource
    Ion-beam mixing kinetics of Fe-Al multilayers studied by in situ electrical resistivity measurements (1984)
    Springer
    Applied physics 33 (1984), S. 77-82 
    Details
    ISSN: 1432-0630
    Keywords: 61.80 ; 72.15 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The ion-beam mixing of Fe-Al evaporated multiple-layer films has been investigated by measuring continuously the electrical resistivity of the samples during the bombardment. The experimental curves exhibit a tendency toward a saturation process and allow the determination of the critical dose corresponding to the total mixing of the multiple-layer film. The variations of the volume fraction of intermixed atoms as a function of the ion dose have been deduced and a semi-empirical model is proposed to explain the observed kinetics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617611
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  • 3
    Electronic Resource
    Electronic Resource
    Mechanisms of phase transformation in low-temperature irradiated NiAl (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1499-1504 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phase transformations induced by low-temperature (15 K), heavy- (Xe) and light- (D) ion irradiation of a monocrystalline NiAl intermetallic compound are investigated via in situ Rutherford backscattering and channeling experiments. Total amorphization of the irradiated layer is observed, whatever the irradiation ion mass, as soon as a mean number of displacements per atom of 0.3–0.4 is reached. On the contrary, the mechanisms of phase transformation appear to be strongly dependent on the cascade regime. Light-ion irradiation leads to a sigmoidal shape of the amorphization kinetics, suggesting that amorphization takes place by a defect accumulation process. Heavy-ion irradiation shows a more complex behavior with the formation of a premartensitic phase prior to amorphization. An interpretation of this new type of phase transformation is presented in terms of defect cascade disordering and damage-induced stresses.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342964
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  • 4
    Electronic Resource
    Electronic Resource
    Temperature dependence for the metastable phase formation in Au50Ni50 thin films under ion bombardment (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 7655-7663 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transformation of crystalline (111) oriented Au50Ni50 thin films produced by ion beam mixing of Au/Ni multilayers was studied under krypton ion irradiation in the temperature range from 4 to 100 K. The volume fraction of the amorphous phase was determined as a function of the ion fluence from in situ resistivity measurements, while ex situ x-ray diffraction was used to analyze the residual crystalline fraction. The experimental results indicate that the total Kr+ fluence necessary for complete amorphization of a metastable Au50Ni50 solid solution exponentially increases with increasing bombardment temperatures up to a critical value Tc of approximately 100 K, above which an ion induced amorphization is no longer possible. Furthermore, within the amorphization regime, two different mechanisms can be distinguished: A direct amorphization process via dense cascades at very low temperatures, while close to Tc overlapping of sequentially damaged regions is required to obtain the amorphous phase. The fact that amorphization is never observed under light ion irradiation even at 4 K demonstrates that the idea of a lattice collapse by defect accumulation cannot explain the amorphization behavior in this system. This points to the importance of energetic dense cascades for the amorphization process. Additional experiments on nanocrystalline Au50Ni50 films suggest that the lack of structural relaxation and/or the reduction of crystalline regrowth at amorphous/crystalline interfaces are necessary conditions for the stabilization of the amorphous clusters formed within the cores of dense cascades. Thus, the observed kinetic behavior is explained by considering the balance between dynamic annealing and amorphous phase formation. The importance of interface processes for crystalline growth is corroborated by studying the ion induced crystallization of an amorphous film. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370568
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  • 5
    Electronic Resource
    Electronic Resource
    Structure and properties of carbon onion layers deposited onto various substrates (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1560-1567 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 120 keV carbon ions implantations at high fluences (0.5–8×1017 ions cm−2) were performed at elevated temperature (≥500 °C) in silver layers deposited on various substrates (Si (100), 304 L stainless steel, and pure fused silica). Spherical carbon onions (3–15 nm in diameter) were so produced in the silver layers. A pure carbon onion thin film deposited on the substrate was obtained after annealing in vacuum. Atomic force microscopy and high-resolution transmission electron microscopy experiments were performed to characterize the structure of the thin films. Optical transmittance spectra of carbon onion layers deposited onto silica substrates revealed two absorption peaks centered at 220–230 nm and at 265 nm that were attributed to the presence of carbon onions and residual disordered graphitic carbon, respectively. Tribological experiments performed on silver–carbon onions composite thin films revealed that the friction coefficient is close to that of a pure silver film (0.2) but with much better wear behavior. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1421222
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  • 6
    Electronic Resource
    Electronic Resource
    Material flow under an indentor in indium phosphide (1996)
    Springer
    Journal of materials science 31 (1996), S. 6571-6576 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Single crystals of indium phosphide, oriented in the 〈001〉 direction and at the temperature of 400 °C, have been deformed by a Vickers indentor. The generation and the development of the dislocations was deduced from the topographical observations of the deformed samples. The dislocation distribution under the indented surface was explained taking into account the dislocation interactions. Finally, both aspects have allowed a greater understanding of material flow under the indentor to be presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00356264
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  • 7
    Electronic Resource
    Electronic Resource
    Deformation of NiO single crystals below room temperature: dislocation configurations (1992)
    Springer
    Journal of materials science 27 (1992), S. 3589-3593 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract NiO single crystals prepared by two crystal growth techniques (zone melting in an arc-image furnace and Verneuil crystallization have been deformed by compression along 〈001〉 at temperatures as low as 4.2 K, and the dislocation substructure observed by transmission electron microscopy. The Peierls mechanism has been suggested as the mechanism controlling the mechanical behaviour at the lower temperatures. The dislocations generated at cavities found in the zone-melted crystals may be responsible for the increase of the flow stress of these crystals compared with the Verneuil ones.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01151837
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  • 8
    Electronic Resource
    Electronic Resource
    A new technique for fullerene onion formation (1995)
    Springer
    Journal of materials science 30 (1995), S. 4787-4792 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract We present an original technique for growing large fullerene onions: carbon-ion implantation at high temperature into copper substrates. Used for carbon film growth (diamond or turbostratic carbon), this method is based on the immiscibility of carbon into copper and can produce an important density of giant carbon onions with size up to some micrometres which is the largest size observed up to now. We characterize these giant fullerenes by TEM, HRTEM and for the first time with AFM. On the basis of both experimental and numerical results we propose a mechanism of formation of the carbon onions during the implantation process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01154486
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