ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Noise measurements on unhydrogenated and hydrogenated rf sputtered intrinsic amorphous silicon reported by D'Amico, Fortunato, and Van Vliet [Solid-State Electron. 28, 837 (1985)] have 1/f and Lorentzian spectra, respectively. Similar noise measurements on glow-discharge deposited hydrogenated amorphous intrinsic silicon reported by Bathaei and Anderson [Philos. Mag. B 55, 87 (1987)] gave a 1/f m spectrum with 0.7〈m〈1. Even more recently Ley and Arce [Proc. MRS Symposium, San Diego (1989)] have reported random telegraph signals in a-Si@B:H/a-Si1−xNx@B:H double barrier structures. The associated noise was a Lorentzian noise spectrum. In this paper the first observation of random telegraph signals in notionally homogeneous heavily doped (p+) glow-discharged-deposited amorphous silicon is reported. It was found that the current passing through the sample fluctuates between two easily identifiable levels with the periods of fluctuations separated by a quiescent period. The occurrence of these fluctuations is unpredictable but the current noise spectrum obtained during quiescent periods is Lorentzian, probably indicative of a generation-recombination process. Noise measurements are not possible at higher biases (〉105 V/cm) as the current fluctuates chaotically and this is also the prebreakdown regime of the sample.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.347103
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