ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We report on the effect of nitridation on the negative and positive charge buildup in SiCgate oxides during carrier injection. We observe that the incorporation of nitrogen at the SiO2/SiCinterface can enhance the reliability of the interface by suppressing the generation of interface statesupon electron injection but that it can also degrade the oxide by creating additional hole traps. Werelate these phenomena to the passivation of atomic-level defects by nitrogen
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.803.pdf
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