ISSN:
1588-2780
Source:
Springer Online Journal Archives 1860-2000
Topics:
Chemistry and Pharmacology
,
Energy, Environment Protection, Nuclear Power Engineering
Notes:
Abstract Occupancy percentages of carbon atoms at trace levels in the Ga1−x Al x As lattice have been determined by irradiating the crystal by a 2.7 MeV deutron beam and exploiting ratios of channeled to random yields for the 〈100〉 and 〈110〉 directions. The influence of the aluminium content on carbon atoms occupancies on centred and displaced tetrahedral as well as octahedral sites occupancies has been measured. Stopping powers of Ga1−x Al x As for the incident particles from the 〈100〉 and 〈110〉 direction irradiations have been determined.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF02042606
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