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  • 1
    Electronic Resource
    Electronic Resource
    Compensation Doping of Polysilicon Films for Stable Integrated Circuit Resistors (1996)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 51-52 (May 1996), p. 561-566 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/25/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.51-52.561.pdf
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Investigations of evaporated silicon p-n junctions and their application to junction field-effect transistors (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2148-2152 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: p-n junctions formed by vacuum evaporation of silicon on crystalline silicon have been investigated. The junctions were formed by ion implantation of 49BF+2 in the evaporated silicon films. Subsequently, an isochronal heat treatment in the range of 600–850 °C was performed and its influence on the doping distributions and corresponding diode behavior was studied. Secondary-ion mass spectrometry was used to investigate the resulting boron distributions. A sharp decrease in the boron concentration was found at the interface for the sample annealed at 850 °C.The fabricated p-n junctions were evaluated by measuring the current-voltage characteristics. Comparisons were made to ordinary diffused p-n junctions in bulk silicon. Using the current-voltage measurements, the leakage current and the ideality factor of the diodes were extracted. The reverse currents were also measured and show a nonsaturating behavior. The resistivity of the films were investigated as a function of anneal temperature, and it was found that the boron in the films is effectively activated for heat treatments 〉700 °C. An estimation of the hole mobility in the films was made from the measured resistivity and doping distributions. The annealed structure was investigated with transmission electron microscopy. The heat treated films were found to be polycrystalline with very small grains (〈250 A(ring)). To demonstrate the usefulness of this technology, a junction field-effect transistor with evaporated gate diode was fabricated. The performance of this transistor is also demonstrated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345550
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  • 3
    Electronic Resource
    Electronic Resource
    Ultrashallow diffused n+p junction using antimony for device applications (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 7413-7416 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental characteristics of ultrashallow n+p junctions manufactured by vacuum evaporation of antimony (Sb) and silicon (Si), followed by heat treatments to recrystallize the amorphous silicon, are presented. It is found that the n+p junction is located less than 300 A(ring) inside the crystalline silicon and that all Sb is redistributed within the regrown film. Comparisons with Schottky (Sb-Si) diodes show that with a heat treatment at 900 °C, the diodes convert fully from Schottky type to n+p type. Furthermore, normally off-type junction field-effect transistors have been fabricated using these n+p junctions as gate junctions, and the characteristics are presented together with data concerning threshold voltage variations. Also, the subthreshold characteristics of these junction field-effect transistors are presented. The behavior in the subthreshold region is found to be excellent.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344530
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    Paper (German National Licenses)
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