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  • 1
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 611 (1990), S. 0 
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3630-3635 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of pinhole-free epitaxial DySi2−x films on atomically clean Si(111) has been achieved by depositing a 2-nm-thick Dy layer onto Si(111) with a 1.5-nm-thick capping amorphous Si (a-Si) layer at room temperature followed by annealing at 700 °C in ultrahigh vacuum. The thickness of the a-Si was selected to be such that the consumption of Si atoms from the substrate is minimized by taking into account the formation of an amorphous interlayer at the Dy/Si(111) interface. Based on our experimental findings, a new mechanism for the formation of pinhole is proposed. The Stranski–Krastanov growth behavior of epitaxial DySi2−x on Si(111) by solid phase epitaxy leads to the apparently random formation of a high density of recessed regions at the initial stage of silicidation. Polycrystalline DySi2−x was found to be present at the areas inside and epitaxial DySi2−x outside the recessed regions. Large numbers of Si atoms from the substrate can therefore diffuse through the recessed regions. As a result, the depth and size of the recessed regions increase with annealing time. Finally, the DySi2−x thin layer inside the recessed regions with higher interface energy is thermally unstable and breaks apart to form pinholes. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 7653-7657 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dominant diffusing species in the formation of amorphous interlayer between Gd and Si thin films have been determined by a Mo cluster marker experiment. Multilayered metal thin films were deposited on (001) Si in an ultrahigh vacuum electron beam evaporator. The positions of the Mo cluster markers relative to the Si substrate, before and after heat treatment, were determined by transmission electron microscopy and energy dispersive x-ray as well as autocorrelation function analysis. The displacement of the Mo cluster markers in the amorphous interlayer during the Gd–Si interdiffusion indicates that Si atoms constitute the dominant diffusing species during the growth of the amorphous interlayer. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6083-6087 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth kinetics of amorphous interlayer (a-interlayer) formed by solid-state diffusion in ultrahigh vacuum deposited polycrystalline Gd thin films on (001)Si have been investigated by cross-sectional transmission electron microscopy. The growth of the a-interlayer was found to follow a linear growth law initially. The growth then slows down and deviates from a linear growth law. The result clearly indicated that the growth at early stage is consistent with an interface-reaction-controlled growth model rather than diffusion limited. The activation energy of the linear growth and maximum thickness of the a-interlayer were measured to be about 0.37 eV and 6.6 nm, respectively. Following the growth of amorphous interlayer, epitaxial hexagonal GdSi2−x was found to form at the a-interlayer/(001)Si interface at 225 °C. The relatively small lattice mismatch between GdSi2−x and (001)Si compared to other RESi2−x (RE=rare-earth metal) and (001)Si systems facilitates the epitaxial growth of GdSi2−x on (001)Si, which in turn hampers the further growth of a-interlayer. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    International Journal of Mass Spectrometry and Ion Physics 39 (1981), S. 327-337 
    ISSN: 0020-7381
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Springer
    Archives of dermatological research 282 (1990), S. 183-187 
    ISSN: 1432-069X
    Keywords: Henoch-Schönlein purpura ; Complement ; Cytolysis ; Endothelial cell damage
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary The present study using direct immunofluorescence with monoclonal antibodies to C5b-9 complex-related antigens was undertaken to determine whether complement activation in Henoch-Schönlein purpura (HSP) causes assembly of the membrane attack complex of complement (MAC) in skin and nephritis lesions. The deposition of C5, C6, C7, C8, C9, and C5b-9 neoantigens was noted in the vascular walls of papillary dermis and/or subpapillary dermal plexus of the vessels in 11 out of 15 patients with HSP. Their presence in vessel walls indicates complement activation which leads to terminal complement activation. There were small deposits of S protein at the same sites in three of the 11 skin specimens. Thus, the majority of C5b-9 demonstrated in HSP skin was the cytolytically active C5b-9 complex, MAC. Granular deposits of C5b-9 related antigens without S protein were also found in the capillary walls and mesangium of the glomeruli of two out of four specimens from patients with HSP nephritis; in the other two S protein was colocalized with the deposition of C5b-9. The results of the present study indicate that complement activation leading to generation of MAC may possibly be involved in the pathogenesis of vascular injury in a significantly large number of skin lesions and of HSP nephritis.
    Type of Medium: Electronic Resource
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