ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
ZnO:Al films were deposited on (12¯10) oriented sapphire substrates heated up to 400 °C by rf magnetron sputtering from a ZnO target mixed with Al2O3 of 2 wt%. Films deposited on a substrate heated to a temperature in the range 50–350 °C were (0001) oriented single crystals but those grown at 400 °C consisted of crystallites with the (0001) and (11¯01) orientation. The former films had relatively smooth surfaces whereas the latter exhibited very rough surfaces. Electrical properties such as resistivity, carrier concentration, and the Hall mobility were measured as a function of substrate temperature. The carrier concentration decreased as the substrate temperature was increased up to 300 °C, although the Al content remained unchanged in this temperature range. From these measurements, it was found that the native donors were important as a source of carriers, even in ZnO:Al films. However, it was found that the Hall mobilities for films with a thickness of more than 200 nm experienced minor changes over a growth temperature range from 50 to 350 °C. The minimum resistivity obtained was about 1.5×10−4Ω cm, a value comparable to that for indium tin oxide film.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.348748
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